2016 Fiscal Year Final Research Report
Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivation
| Project/Area Number |
15K13951
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
SHIMURA Takayoshi 大阪大学, 大学院工学研究科, 准教授 (90252600)
HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Keywords | 電子・電気材料 / パワーエレクトロニクス |
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| Outline of Final Research Achievements |
SiC has gained considerable attention as a promising material for next-generation power electronics due to its superior breakdown field and thermal conductivity. However, SiC-MOS devices have suffered from deteriorated interface properties leading to low channel mobility and poor reliability. In this study, we propose a novel method based on beam induced interface reactions and subsequent defect passivation to overcome these problems. For this purpose, we evaluated interaction between high-energy electron beam and defects at thermally-grown SiO2/SiC interfaces by means of cathodoluminescence technique. We revealed that there exist radiative defect centers with an extremely high luminescent efficiency that were localized near the oxide interface of a few nm thick and discussed possible physical origins of the radiative defects in thermally-grown SiO2/SiC structures. Moreover, we conducted dry oxidation of SiC surfaces with UV-light illumination in order to validate our proposed method.
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| Free Research Field |
薄膜工学
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