Establishment of carrier controlled semiconducting diamond by high-pressure and high-temperature technique

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K13957
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Ehime University
• Principal Investigator: Ishikawa Fumitaro 愛媛大学, 理工学研究科(工学系), 准教授 (60456994)
• Co-Investigator(Kenkyū-buntansha): 松下 正史 愛媛大学, 理工学研究科(工学系), 准教授 (90432799)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: ダイヤモンド / 高温・高圧合成 / ドーピング / 電子材料 / イオン注入 / ナノ構造

Outline of Final Research Achievements

For the future application of electronic materials, we investigates the conductivity of nano-polycrystalline diamond synthesized by high-pressure and high-temperature technique. Also to control its conductivity, we tried impurity doping on the diamond. We observed semiconducting conductivity for the nano-polycrystalline diamond at temperatures higher than 400 degree C. Also, optical characteristics were investigated on that. When nano-polycrystalline diamond was synthesized with InP, it seemed to be introduced into the crystal. We prepared single crystalline diamond and put P ion implantation on its surface. After applying high pressure and high temperature for the diamond, unexpected pyramidal microstructure was formed on the surface.

Free Research Field

電気・電子材料