2016 Fiscal Year Final Research Report
Challenge to realize a 100Gb/s directly modulated semiconductor laser
Project/Area Number |
15K13961
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Electron device/Electronic equipment
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Research Institution | Tohoku University |
Principal Investigator |
YASAKA Hiroshi 東北大学, 電気通信研究所, 教授 (50509099)
|
Research Collaborator |
MIEDA Shigeru
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Project Period (FY) |
2015-04-01 – 2017-03-31
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Keywords | 半導体レーザ / 直接変調 / 相互利得変調 / 共振器損失変調 / 混合変調 / 周波数チャープ / 外部共振器 |
Outline of Final Research Achievements |
To realize ultra-high speed operation of semiconductor laser monolithically integrating with external cavity, hybrid modulation scheme is proposed which introduces cavity loss modulation and injection current modulation to a semiconductor laser simultaneously. It was confirmed numerically and experimentally that the frequency response of intensity modulation can be controlled and modulation sensitivity degradation at high frequency region can be reduced by applying the hybrid modulation scheme to the laser. It was also confirmed that the hybrid modulation scheme is also effective to control the frequency chirp of optical signal and enhance the dispersion tolerance in optical fiber transmission. Based on these results, the design principle for ultra-high speed semiconductor laser operating up to 100 Gb/s was made clear.
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Free Research Field |
高機能半導体レーザ光源や高機能半導体光集積回路を実現する半導体フォトニクス工学分野
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