Ultra-Low Voltage Operating Silicon Nanowire Transistors with Threshold Voltage Self-Adjusting Mechanism

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K13967
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: The University of Tokyo
• Principal Investigator: Hiramoto Toshiro 東京大学, 生産技術研究所, 教授 (20192718)
• Co-Investigator(Renkei-kenkyūsha): Masaharu Kobayashi 東京大学, 生産技術研究所, 准教授 (40740147) ; Takuya Saraya 東京大学, 生産技術研究所, 助手 (90334367)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 半導体物性 / 大規模集積回路 / MOSFET / ナノワイヤトランジスタ / しきい値電圧自己調整

Outline of Final Research Achievements

In this study, silicon nanowire transistor with threshold voltage (Vth) self-adjusting mechanism was designed and fabricated in order to realize ultra-low voltage operating transistors. In this mechanism, Vth decreases at the ON-state and Vth increases at the OFF-state, resulting in ultra-low voltage operation. The width of the fabricated nanowire transistor was as small as 38nm. It was confirmed that the fabricated nanowire transistor has the Vth self-adjusting mechanism at supply voltage as low as 0.1V.

Free Research Field

集積デバイス工学