2017 Fiscal Year Final Research Report
A study on integrated single organic semiconductor complementary transistors with top-gate structures
| Project/Area Number |
15K13969
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
|
|---|
| Research Collaborator |
MAEDA Yasutaka
HIROKI Mizuha
FURUYAMA Shu
|
|---|
| Project Period (FY) |
2015-04-01 – 2018-03-31
|
| Keywords | 有機半導体 / 有機絶縁体 / 相補型トランジスタ / 界面制御 / 低仕事関数金属 / 微細化 / 集積化 |
|---|
| Outline of Final Research Achievements |
In this research, we investigated top-gate type single organic semiconductor complementary transistor (CMOS) utilizing low work-function metal as an interface control layer to improve the characteristics of organic semiconductor transistor (OFET).
Firstly, single crystal channel rubrene-based OFET was successfully fabricated by the narrow line crystallization of rubrene. Next, the top-gate type pentacene-based OFET with amorphous rubrene gate insulator was realized by the lithography process with the channel length of 2.3 um. Finally, electron injection to the pentacene was realized by the nitrorogen-doped LaB6 interface control layer. Furthermore, it was realized that the back-gate type single organic semiconductor pentacene-based pseudo CMOS utilizing threshold voltage control by the nitrogen-doped LaB6 interface control layer. The logic swing of 1.8 V was obtained in air. These results are expected to realize the single organic semiconductor CMOS.
|
| Free Research Field |
電子工学
|
