Infrared Laser Beam Profiling Technique using Thermal Noise in Semiconductor Image Sensors

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K13984
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Numata Takayuki 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 主任研究員 (60420288)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 赤外線 / レーザ / ビームプロファイル / イメージセンサ

Outline of Final Research Achievements

A novel measurement technique of infrared laser beam profile using thermally excited carriers in semiconductor image sensor has been proposed and demonstrated. A mid-infrared laser beam from a carbon dioxide laser with known radiant power and beam size are locally irradiated on sensitive area of a silicon-based image sensor. Thermally excited carriers are detected by corresponding pixels and compose a beam spot-like image. Ratio of 1/e2 diameters between incident laser and detected signals among different size of incident laser beam showed their good correlation. The result shows a strong potential of this proposed method as a new measurement technique for infrared laser beam.

Free Research Field

レーザ放射計測