Spin injection into graphene from ferromagnetic van der Waals materials

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K17433
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: The University of Tokyo
• Principal Investigator: Arai Miho 東京大学, 生産技術研究所, 特任研究員 (20738588)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: ファンデルワールス接合 / 強磁性 / スピントロニクスデバイス

Outline of Final Research Achievements

A van der Waals (vdW) junction based on two-dimensional materials presents a new method for constructing heterostructures with high quality interfaces. Since there are various layered materials, a number of combinations are applicable to built vdW heterostructures, such as metal, insulator, semiconductor, superconductor, and topological insulator. However, a vdW heterostructure including ferromagnetic layered materials is still missing. We fabricated Fe0.25TaS2/Fe0.25TaS2 and Fe0.25TaS2/ Cr1/3TaS2 junctions and observed magnetic resistance. We observed magneto-resistance signals witch can be assigned to the switching of magnetization between parallel and antiparallel configuration. The observed signal is attributed to a tunnel magneto-resistance effect. Our study demonstrates that vdW heterostructures can be used for spintoronics devices.

Free Research Field

複合原子層ファンデルワールス接合