Operation mechanism of VO2-channel Mott transistors and their low-voltage operation

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K17466
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: The University of Tokyo
• Principal Investigator: Yajima Takeaki 東京大学, 大学院工学系研究科(工学部), 助教 (10644346)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 酸化バナジウム / モット転移 / 金属絶縁体転移 / 相転移 / 電界効果トランジスタ / ショットキー接合 / 酸化物ヘテロ構造 / エピタキシャル界面

Outline of Final Research Achievements

Today's electronics strongly desires the low-voltage transistors for decreasing the power consumption of the next-generation integrated circuits. This research focused on the novel field-effect transistor which incorporates the metal-insulator transitions of VO2 in the transistor channel, and is expected to sharpen the switching slope and achieve the low-voltage operation. The transistor incorporating VO2 was successfully demonstrated, and its operation mechanism was elucidated through the evaluation of the local electronic states at the interface as well as the interaction between the interface and the rest of the VO2 channel.

Free Research Field

酸化物エレクトロニクス