Development of electron-tracking semiconductor Compton camera with a stacked-layer silicon-on-insulator pixel detector

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K17648
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Particle/Nuclear/Cosmic ray/Astro physics
• Research Institution: University of Miyazaki (2016-2017); Kyoto University (2015)
• Principal Investigator: Takeda Ayaki 宮崎大学, 工学部, 助教 (40736667)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: コンプトンカメラ / 電子飛跡 / ピクセル検出器 / 半導体検出器 / silicon-on-insulator / 宇宙ガンマ線観測

Outline of Final Research Achievements

Currently, space observation using hard X-ray to MeV gamma rays region radiation is under progress. Improvement of the performance of observation instruments is important for the development of this field. Here, we developed a basic technology to realize electron- tracking semiconductor Compton camera having an event-driven silicon-on-insulator pixel detector.
1) We reduced the device noise from 35 e- (rms) to 16 e- (rms) by introducing a new structure for the pixel. The spectroscopic performance of the event-driven readout mode was improved by suppressing crosstalk between the circuit and the sensor. 2) A stacked-layer board was developed for the prototype Compton camera. We were able to obtain the spectra by the evaluation test of the developed board.

Free Research Field

物理計測システム