2017 Fiscal Year Final Research Report
An approach from high pressure and high temperature method in order to clarify the mechanism of Kondo semiconductor with novel antiferromagnetic properties.
| Project/Area Number |
15K17687
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics II
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| Research Institution | Muroran Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | 希土類化合物 / 反強磁性 / 近藤半導体 / 高温高圧合成法 / 放射光粉末X線回折 / 単結晶構造解析 / 低温高圧下 / 構造物性 |
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| Outline of Final Research Achievements |
CeT2Al10 (T = Ru, Os) shows antiferromagnetic ordering and Kondo semiconducting behavior due to the hybridization between 4f electrons of Ce and conduction electrons.
Because these two phenomena are not believed to happen at the same time, the final goal of this study is to clarify a mechanism behind these behavior. The purpose of this study is “Searching new material by high temperatures and high pressures” and “Investigating crystal structure at low temperatures and under high pressures” so that we can investigate CeT2Al10 from different point of views.
We revealed that the shrinkage along a and c axis largely affects physical properties and clarified that the temperature dependence of shrinkage in the crystal structure is insensitive to changing T site.
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| Free Research Field |
強相関電子系
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