Characterization and control of insulator/AlGaN interface for power device application

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K18034
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Kumamoto University
• Principal Investigator: Yatabe Zenji 熊本大学, 大学院先導機構, 助教 (00621773)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 窒化物半導体 / MIS構造 / 高電子移動度トランジスタ / 界面準位

Outline of Final Research Achievements

To control reliability and degradation issue such as threshold voltage (VTH) instability in AlGaN/GaN high-electron-mobility transistors (AlGaN/GaN HEMTs) with metal-insulator-semiconductor (MIS) structures, we have investigated insulator/AlGaN interface properties. The correlation between the interface properties and VTH instability in AlGaN/GaN MIS HEMTs were discussed on the basis of both experimental and theoretical results. From the analysis of the results, we have come to the conclusion that that the interface states at insulator/AlGaN caused VTH instability in AlGaN/GaN MIS HEMTs. In addition, aluminum titanate, a novel and promising gate dielectric was successfully fabricated by ultrasonic spray-assisted mist chemical vapor deposition (mist CVD), which is a low-cost and low-damage alternative for dielectric deposition.

Free Research Field

半導体デバイス工学