Single photon generation from Er atomic-layer doped semiconductors with micro-cavity structures

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K18035
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Saitama University
• Principal Investigator: TAKAMIYA Kengo 埼玉大学, 総合技術支援センター, 専門技術員 (70739458)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 単一光子 / エルビウム / 原子層ドープ / 微小共振器構造 / 非古典光源

Outline of Final Research Achievements

Various techniques have been studied for realizing single photon sources which play a key role in the field of quantum information technology. In this study, I focused my attention on the feature of Er emission and carried out an investigation to realize single photons with excellent characteristics in long distance transmission and temperature dependence.
It is found that the number of Er emission centers can be controlled by changing the growth temperature and time of the GaAs cap layer in Er atomic-layer doped GaAs. In addition, enhancement of Er emission intensity was achieved by fabricating Er atomic-layer doped GaAs with GaAs/AlAs distributed Bragg reflectors.

Free Research Field

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