Growth of low-reisitivity diamond wafers for ultra low-loss power electronics

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K18043
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: OHMAGARI Shinya 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究員 (40712211)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: ダイヤモンド / ホウ素ドープ / 低抵抗 / ウェハ / 化学気相成長法 / 欠陥

Outline of Final Research Achievements

Since diamond has superior physical properties than SiC and GaN, it is expected as material for ultra low-loss power electronics. The excellent switching capabilities has been demonstrated for both unipolar and bipolar devices. For practical vertical device structure, low-resistivity wafers are required. However, as for the conventional CVD, the instability of crystal growth such as soot formation, low doping efficiency has been a problem. In this research, heavily boron-doped diamond wafers were fabricated by hot filament CVD method which has advantageous in large area growth. We realized high doping concentration exceeding 1E21 cm-3, and low-resistivity wafer of the few mΩcm. The crystal quality was equivalent to that of commercially available insulating wafers. The high rectifying operation of vertical Schottky barrier diodes was also demonstrated.

Free Research Field

電気電子材料 (半導体)