Studies of high temperature operation THz QCLs by modulation barriers structure

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K18059
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Institute of Physical and Chemical Research
• Principal Investigator: Lin Tsung-Tse 国立研究開発法人理化学研究所, 光量子工学研究領域, 研究員 (40585155)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 量子カスケードレーザー / テラヘルツ

Outline of Final Research Achievements

Here we utilize the modulation barriers active region designe with different barriers and wells height at one period of THz QCLs. In order to realize the difficult alternative consideration of barriers height at injection/extraction and emission layers. The wide-low barriers at emission layers reduce the non-radiative interface roughness (IR) scattering and keep the high optical gain. And the thin-high barriers improve the injection/extraction efficiency by the same IR scattering at injection/extraction layers. We demonstrate the first experimental results of high temperature operation THz QCLs designed by this kind of variable height structure. We also report the high output power THz QCLs with peak power 250 mW and average power 2.2 mW at low temperature; fabricate the compact potable 77K liquid nitrogen temperature Dewar condenser by THz QCLs with peak power 10 mW and average power 0.1 mW.

Free Research Field

テラヘルツ