Direct imaging of dopant intercalation in two-dimensional materials

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K18202
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Physical properties of metals/Metal-base materials
• Research Institution: The University of Tokyo
• Principal Investigator: Ishikawa Ryo 東京大学, 大学院工学系研究科(工学部), 助教 (20734156)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: インターカレーション / 電子顕微鏡 / 単原子ドーパント

Outline of Final Research Achievements

After the success of GaN in blue-light-emission, researchers are exploring new materials for optoelectronic devises working in ultraviolet or far-ultraviolet wavelength ranges. In this study, we have investigated hexagonal boron nitride (h-BN) with doping rare-earth elements, exhibiting light luminescence. To elucidate the origin of light emission, we have used atomic-resolution scanning transmission electron microscopy, suggesting that the heavy dopants are location not in the lattice but between inter-layers: the dopants are intercalating. This result indicates that layer compounds could be useful to dope functional elements with relatively larger ionic radii compared to the bulk constituent elements.

Free Research Field

金属，セラミックス，電子顕微鏡