2015 Fiscal Year Research-status Report
廃プラスチックを利用したCVD法による巨大粒径グラフェンの合成と透明導電膜の開発
| Project/Area Number |
15K21076
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
カリタ ゴラップ 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (20615629)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Keywords | graphene |
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| Outline of Annual Research Achievements |
In this research proposal, we planned to synthesis graphene film constituting large domains by the developed solid carbon source based CVD technique. Waste plastics containing polystyrene and polyethylene is explored as the solid carbon source for synthesis of large graphene domains. In this prospect, we investigated the annealing process to create an oxide layer and subsequent recrystallization of Cu foil for growth of large graphene domain by the CVD technique. Initially, electroless polished Cu foils are annealed in Ar and then in H2 atmosphere to obtain a smoother surface with reduced graphene nucleation sites. The transformation of Cu grain structures at various annealing steps was confirmed, where the gas atmosphere and annealing duration have significant influence. Formation of millimeter scale structures are obtained with merging of 560 and 825µm large two graphene domains. Again, we have demonstrated H2 induced etching features of graphene crystals with different structures synthesized from polystyrene. We synthesized six-lobed dendritic graphene along with regular graphene crystals on electro-polished Cu foil by an AP-CVD process. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystal by annealing at 1055℃ in a gas mixture of H2 and Ar. We have also observed hexagonal-hexagonal stacking formation along with the snowflake dendritic crystals and their particular etching behavior. This finding can be significant to understand the nucleation and growth of graphene crystals.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
In the last one year we are able to grow large size graphene domain as planned early using the organic molecules of waste plastic as carbon source. Presently, experiments on synthesis of much larger graphene domain and their continuous film are going on by the optimizing the precursor injection rate.
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| Strategy for Future Research Activity |
The role of O2 and H2 in growth process of large graphene domain with minimum defect on Cu substrate will be explored. Thus controlling the nucleus on substrate we expect to growth centimeter-scale domain at a higher growth rate using the solid carbon source containing linear carbon chain and carbon rings. We are performing experiments on developments of graphene transfer process for fabrication of transparent conductor. We are expecting to fabricate highly transparent graphene electrode with low sheet resistance than that of present status.
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| Causes of Carryover |
The amount was not used as we have to purchase new costly CVD parts in the next fiscal year. The remaining amount will be used to purchase CVD parts along with amount of 2nd financial year. We expect that this will help us to achieve the goal of the research proposal.
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| Expenditure Plan for Carryover Budget |
Purchase of CVD parts to achieve control injection of carbon precursors. This will help us to growth large graphene domains and thereby fulfilling the research goals.
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