Epitaxial growth of 3D structured single crystal

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K21095
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties; Material processing/Microstructural control engineering
• Research Institution: Kyoto University
• Principal Investigator: Miyake Masao 京都大学, エネルギー科学研究科, 准教授 (60361648)
• Research Collaborator: SUGINOHARA Makoto 京都大学, 大学院エネルギー科学研究科, 大学院生 ; NARAHARA Naoto 京都大学, 大学院エネルギー科学研究科, 大学院生
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: フォトニック結晶 / 水熱合成 / 水溶液プロセス / 多孔質材料

Outline of Final Research Achievements

Many types of research have been reported for the fabrication of nanoporous semiconductors with a view of improving their properties and obtaining new functionalities. However, most of the three-dimensional nanoporous materials reported so far are composed of nanocrystalline or amorphous, meaning that the defect density of the material is high, and therefore, the electrical properties and light emitting properties are not good enough for many applications. If the porous material is a single crystal, a drastic improvement in the properties can be expected, and it would lead to the development of new applications in many fields. In this study, we developed a method to grow a semiconductor material from an aqueous solution epitaxially into a 3D structured template. As a result, 3D porous materials exhibiting good luminescence and electrical properties could be obtained.

Free Research Field

材料電気化学