2016 Fiscal Year Final Research Report
Gas sensor application of the heterojunction interface in the atomically-thin layered materials
| Project/Area Number |
15K21145
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Nano/Microsystems
Electronic materials/Electric materials
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2015-04-01 – 2017-03-31
|
| Keywords | ガスセンサー / 原子層薄膜 / グラフェン / 遷移金属ダイカルコゲナイド / ヘテロ接合 / ダイオード |
|---|
| Outline of Final Research Achievements |
In this project, we investigated the impact of adsorption of gas molecules on carrier transport across the vdWs heterojunction consisting of atomically thin-layered materials and explored the novel functions of the heterojunction device useful for gas sensing. We fabricated a pn-junction device using WSe2/MoS2 heterostructure and a Schottky junction device using graphene/MoS2 heterostructure and measured their responses upon exposure of NO2 gas. We found a photovoltaic gas response under light illumination in the WSe2/MoS2 device, and a giant response owing to the Schottky barrier height modulation in the graphene/MoS2 device, and its tunability by bias and gate voltages
|
| Free Research Field |
ナノ材料物性、ナノ材料工学
|
