The fabrication of new spin injection device by ferromagnetic metal Fe3Si/semiconducting FeSi2 artificial lattice

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K21594
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment; Physical properties of metals/Metal-base materials
• Research Institution: Kurume National College of Technology
• Principal Investigator: Sakai Ken-ichiro 久留米工業高等専門学校, 制御情報工学科, 助教 (00634495)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 電気的スピン注入

Outline of Final Research Achievements

In this study, we fabricated ferromagnetic Fe3Si / semiconducting FeSi2 artificial lattices, and electrical spin injection from the Fe3Si layer to the FeSi2 layer was studied based on local 2-terminal and non-local 4-terminal type spin valve effects. For experiments with the local 2-terminal element, the generation of spin-polarized current from the Fe3Si layer to the FeSi2 layer was confirmed. In addition, it was found that the spin diffusion length (transport length) in FeSi2 is at least 100 nm. For experiments with the nonlocal 4-terminal element, it was demonstrated that pure spin current can be generated from the Fe3Si layer into the FeSi2 layer.

Free Research Field

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