Nanoscale properties in strongly correlated oxide 3D nanostructures and their application for an electronic phase change device (Fostering Joint International Research)

2017 Fiscal Year Final Research Report

• Project/Area Number: 15KK0236
• Research Category: Fund for the Promotion of Joint International Research (Fostering Joint International Research)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials
• Research Institution: Osaka University
• Principal Investigator: Tanaka Hidekazu 大阪大学, 産業科学研究所, 教授 (80294130)
• Research Collaborator: RAMANATHAN Shriram Purdue University, Materials Engineering, 教授 ; ZAO Fan Purdue University, Materials Engineering, Post Doctoral Fellow ; SUN Yifei Purdue University, Materials Engineering, Post Doctoral Fellow ; RAMADOSS Koushik Purdue University, Materials Engineering, Post Doctoral Fellow ; KANKI Teruo 大阪大学, 産業科学研究所, 准教授 ; HATTORI Azusa 大阪大学, 産業科学研究所, 助教 ; YAMAMOTO Mahito 大阪大学, 産業科学研究所, 助教
• Project Period (FY): 2016 – 2017
• Keywords: 遷移金属酸化物 / 強相関電子系 / 金属‐絶縁体相転移 / ナノデバイス / イオンドーピング / ハイブリッドゲート

Outline of Final Research Achievements

During September 25, 2016 to May 12th, 2017, the principal Investigator stayed at Prof. Ramanathan Lab., Purdue University, USA for collaborative research. It was discovered that H+ and Li+ dopings by Pt catalyst method enhanced electrical resistivity in EuNiO3 and SmNiO3 films by 5 to 6 orders of magnitude. In Epitaxial VO2 film, H+ doping enhanced their electrical resistivity, which is different tendency previously reported in polycrystalline VO2 films. In addition, we successfully observed electric field induced reversible and nonvolatile electric resistance changes in micropatterned SmNiO3 and EiNiO3 devices with asymmetric Pt and Au electrodes.

Free Research Field

ナノ機能材料科学