Silicon single-electron devices : Time-space control of transport and development of new functions

2008 Fiscal Year Final Research Report

• Project/Area Number: 16106006
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Shizuoka University
• Principal Investigator: TABE Michiharu Shizuoka University, 電子工学研究所, 教授 (80262799)
• Co-Investigator(Kenkyū-buntansha): IKEDA Hiroya 静岡大学, 電子工学研究所, 准教授 (00262882) ; ONO Yukinori NTT, 物性科学基礎研究所, 主任研究員 (80374073) ; AMEMIYA Yoshihito 北海道大学, 工学研究科, 教授 (80250489) ; ISHIKAWA Yasuhiko 静岡大学, 電子工学研究所, 助手 (60303541) ; RATNO Nuryadi 静岡大学, 創造科学技術大学院, 助教 (70402245)
• Project Period (FY): 2004 – 2007
• Keywords: 少数電子素子 / マイクロ・ナノデバイス / 量子ドット / トンネル現象

Research Abstract

本研究においては、これまで(1)ランダム多重トンネル接合系における単電子転送の実証とそのシミュレーション解析、(2)マルチドット型単電子FET 特性の可視域光子との相互作用解明、(3)極低温KFM によるチャネル内の単一リン・ボロンドーパントの検出、(4)転位網利用周期ポテンシャルを利用した単電子特性の実現、を行った。これらを総合することにより、ランダム系シリコン多重ドット単電子デバイスの輸送制御に見通しが得られた。

Research Products

• [Journal Article] Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-On-Insulator Field-Effect Transistors (2009)
  • Author(s): D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno and M. Tabe
  • Journal Title: APEX, to be published
  • Peer Reviewed
• [Journal Article] Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots (2009)
  • Author(s): K. Yokoi, D. Moraru, M. Ligowski and M. Tabe
  • Journal Title: Jpn. J. Appl. Phys Vol.48 Pages: 024503-1-7
  • Peer Reviewed
• [Journal Article] Observation of individual dopants in a thin silicon layer by low temperture Kelvin Prove Force Microscope (2008)
  • Author(s): M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski and M. Tabe
  • Journal Title: Appl. Phys. Lett Vol.93, No.14 Pages: 142101-1-3
  • Peer Reviewed
• [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires (2007)
  • Author(s): D. Moraru, Y. Ono, H. Inokawa and M. Tabe
  • Journal Title: Phys. Rev. B Vol.76, no.7 Pages: 075332-1-5
  • Peer Reviewed
• [Journal Article] Detection of field-induced single -acceptor ionization in Si by singleholetunneling transistor (2007)
  • Author(s): Z. A. Burhanudin, R. Nuryadi and M. Tabe
  • Journal Title: Appl. Phys. Lett. Vol.91, No.4 Pages: 042103-1-3
  • Peer Reviewed
• [Journal Article] Numerical study of turnstile operation in random-multidot-channel field-effect transistor (2006)
  • Author(s): H. Ikeda and M. Tabe
  • Journal Title: Appl. Phys. Lett. Vol.91, No.4 Pages: 073705-1-6
  • Peer Reviewed
• [Journal Article] Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network (2006)
  • Author(s): Y. Ishikawa, C. Yamamoto and M. Tabe
  • Journal Title: Appl. Phys. Lett. Vol.88 Pages: 073112-1-3
  • Peer Reviewed
• [Journal Article] Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array (2006)
  • Author(s): R. Nuryadi, Y. Ishikawa and M. Tabe
  • Journal Title: Phys. Rev. 73 Pages: 045310-1-7
  • Peer Reviewed
• [Presentation] Observation of discrete dopant potential and its application to Si single-electron devices (2009)
  • Author(s): M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski and T. Mizuno
  • Organizer: 6th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, California, USA
  • Year and Date: 20090517-22
• [Presentation] Application and Observation of Discrete Dopant Potential for Si Single-Electron Devices (2008)
  • Author(s): M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski and T. Mizuno
  • Organizer: IUMRS International Conference in Asia 2008 (IUMRS-ICA
  • Place of Presentation: Nagoya
  • Year and Date: 20081209-13
• [Presentation] Si Single-Electron SOI-MOSFETs : Interplay with Individual Dopants and Photons (2008)
  • Author(s): M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonski and T. Mizuno
  • Organizer: MRS fall meeting 2008
  • Place of Presentation: Boston・MA
  • Year and Date: 20081201-05
• [Presentation] Si single-electron devices : manipulation of individual dopants manipulation of individual dopants (2008)
  • Author(s): M. Tabe
  • Organizer: The 5th International Workshop on Nanoscale Semiconductor Devices (IWNSD)
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2008-05-16
• [Presentation] Si Single-Electron Devices : Interaction with Individual Dopants and Photons (2007)
  • Author(s): M. Tabe, R. Nuryadi, D. Moraru, Z. A. Burhanudin, H. Ikeda
  • Organizer: Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Tokyo
  • Year and Date: 20071112-14
• [Presentation] シリコン単電子デバイス-ランダムドット系での単電子操作と光応用- (2007)
  • Author(s): 田部道晴
  • Organizer: 応用物理学会 第20回上田記念講演会および東海支部40 周年記念会
  • Place of Presentation: 名古屋ガーデンパレス
  • Year and Date: 2007-01-06
• [Book] シリコンフォトニクス-先端光テクノロジーの新展開-、第4章「受光素子」 金光義彦・深津晋(共編) (2007)
  • Author(s): 田部道晴
  • Total Pages: 119-154
  • Publisher: オーム社
• [Book] Eds : D. Ferry and S. Oda, CRC Press (2006)
  • Author(s): M. Tabe, H. Ikeda and Y. Ishikawa
  • Total Pages: 133-154
  • Publisher: Silicon Nanoelectronics, chapter 6 Resonant tunneling in Si nanodevices
• [Remarks] (1)田部 道晴 : 集積回路原子の「ムラ」検査-静岡大、微細化促す新技術日経産業新聞(2008.10.2)
• [Remarks] (2)田部 道晴 : 第20 回(平成18 年度)「高柳記念賞」受賞が新聞に掲載される.中日新聞、静岡新聞(2006.12.10)
• [Remarks] (3)田部道晴 : 「コンピューター光で動かせる? 光子を検出 微小シリコン開発」朝日新聞(2005.10.22)
• [Remarks] 電子工学研究所
  • URL: http://www.rie.shizuoka.ac.jp/index.html
• [Remarks] 田部研究室
  • URL: http://www.rie.shizuoka.ac.jp/~nanohome