2007 Fiscal Year Final Research Report Summary
A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperature
| Project/Area Number |
16201029
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | The University of Tokyo |
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Principal Investigator |
HIRAMOTO Toshiro The University of Tokyo, Institute of Industrial Science, Professor (20192718)
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| Co-Investigator(Kenkyū-buntansha) |
SAKURAI Takayasu University of Tokyo, Institute of Industrial Science, Professor (90282590)
SARAYA Takuya University of Tokyo, Institute of Industrial Science, Research Associate (90334367)
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| Project Period (FY) |
2004 – 2007
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| Keywords | Nanoelectronics / MOSFET / Single-Electron Transistor / Quantum Effect Device / Coulomb Blockade / CMOS / Functional Device / Analog Pattern Matching Circuit |
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| Research Abstract |
This research aims at a new concept of integrate circuit in which new functional devices utilizing single-electron/quantum effect and conventional CMOS devices are merged operating at room temperature. At first, the fabrication process of single-electron transistors was developed. The world largest peak-to-valley current ratios of Coulomb blockade oscillations and negative differential conductance at room temperature were successfully obtained. Furthermore, the precise control of the peak position of the Coulomb blockade oscillations was achieved for the first time in single-hole transistors which have very small quantum dots. The unique characteristics originate from large quantum energy spacing in the quantum dot. Next, the integration of single-electron transistors operating at room temperature was pursued. The process conditions were finely tuned and finally, the single-electron transistors operating at room temperature were successfully integrated for the first time. Moreover, analog pattern matching circuits were fabricated by integrating single-electron transistors and their operations were demonstrated at room temperature.
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