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2006 Fiscal Year Final Research Report Summary

Development of oxide semiconductor and dielectric electronics using helicon-wave-excited-plasma sputtering methods

Research Project

Project/Area Number 16360146
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionUniversity of Tsukuba

Principal Investigator

CHICHIBU Shigefusa  University of Tsukuba, Graduate School of Pure and Applied Sciences, Associate Professor, 大学院数理物質科学研究科, 助教授 (80266907)

Co-Investigator(Kenkyū-buntansha) UEDONO Akira  University of Tsukuba, Graduate School of Pure and Applied Sciences, Associate Professor, 大学院数理物質科学研究科, 助教授 (20213374)
SUEMASU Takashi  University of Tsukuba, Graduate School of Pure and Applied Sciences, Associate Professor, 大学院数理物質科学研究科, 助教授 (40282339)
Project Period (FY) 2004 – 2006
KeywordsHelicon-wave-excited-plasma / zinc oxide / dielectric oxides / transparent conducting oxides / distributed Bragg reflector / epitaxy / multilayer structures / magnesium zinc oxide
Research Abstract

To progress 'Oxide Optoelectronics' using the helicon-wave-excited-plasma sputtering (HWPS) method, deposition of polycrystalline thin films, epitaxial growth of semiconductors, deposition of multilayer structures of dielectric materials, and metal oxides were carried out. Significant results are following.
i) Effectiveness of the high-temperature-annealed self-buffer layer (HITAB) on the heteroepitaxy of ZnO and MgZnO was investigated for the epitaxial growth using HWPS method, namely HWPSE. Atomically flat HITAB was obtained by depositing 100-nm-thick films of ZnO or MgZnO at 500-600 ℃ followed by high-temperature annealing at 900-1000 ℃ for 1 hr. The ZnO epilayers grown on ZnO HITAB prepared on a-plane Al_2O_3 substrates exhibited a free-excitonic photoluminescence (PL) peak at low temperature, and the PL spectra at 300 K were dominated by the near-band-edge excitonic emissions.
ii) As transparent conducting oxide (TCO) films for photovoltaic (PV) applications, indium tin oxide (ITO) as well as polycrystalline ZnO doped by Al or Ga were deposited by the HWPS method. The electron concentration of Ga-doped ZnO (ZnO : Ga) films was as high as 10_<20> cm_<-3>. For the light absorbing layers, good quality Cu (Ga_xIn_<1-x>)Se_2 films were prepared by the selenization technique using metalorganic sources.
iii) Distributed Bragg reflectors (DBRs) composed of 8-pair SiO_2/ZrO_2 dielectric multilayers, of which central wavelength was tuned at B-exciton resonance wavelength of ZnO (366.5 nm), were fabricated using the reactive HWPS (R-HWPS) method. The reflectivity at 366. 5 nm was higher than 99. 5% and the stop-band width (R【greater than or equal】95%) was as large as 82 nm.
iv) Delafossite structure CuAlO_2 films, which are expected to be p-type TCO films, were deposited by HWPS using Cu and Al metal targets, as well as by R-HWPS method using CuAlO_2 sintered target. Although low resistivity films are not yet obtained, delafossite structure was confirmed.

  • Research Products

    (24 results)

All 2007 2006 2005 2004

All Journal Article (24 results)

  • [Journal Article] Growth of single-phase CuInGaSe_2 photoabsorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source2007

    • Author(s)
      M.Sugiyama, A.Kinoshita, M.Fukaya, H.Nakanishi, S.F.Chichibu
    • Journal Title

      Thin Solid Films 515

      Pages: 5867-5870

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Recombination dynamics of excitons in MgO. 11ZnO. 890 alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy2007

    • Author(s)
      M.Kubota, T.Onuma, A.Tsukazaki, A.Ohtomo, M.Kawasaki, T.Sota, S.F.Chichibu
    • Journal Title

      Applied Physics Letters 90

      Pages: 141903 1-3

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth of single-phase CuInGaSe_2 photoabsorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source2007

    • Author(s)
      M.Sugiyama, A.Kinoshita, M.Fukaya, H.Nakanishi, S.F.Chichibu
    • Journal Title

      Thin Solid Films 515 (15)

      Pages: 5867-5870

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Recombination dynamics of excitons in Mg_<0.11> Zn_<0.89>O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy2007

    • Author(s)
      M.Kubota, T.Onuma, A.Tsukazaki, A.Ohtomo, M.Kawasaki, T.Sota, S.F.Chichibu
    • Journal Title

      Applied Physics Letters 90 (14)

      Pages: 141903 1-141903 3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Dielectric SiO_2/ZrO_2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method2006

    • Author(s)
      S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama
    • Journal Title

      Applied Physics Letters 88(16)

      Pages: 161914 1-3

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006

    • Author(s)
      S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
    • Journal Title

      Journal of Applied Physics 99(9)

      Pages: 093505 1-6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films2006

    • Author(s)
      M.Sugiyama, A.Murayama, T.Imao, K.Saiki, H.Nakanishi, S.F.Chichibu
    • Journal Title

      Physica Status Solidi (a) 203(11)

      Pages: 2882-2886

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Preparation of High Ga-content CuInGaSe_2 Films by Selenization of Metal Precursors Using Diethylselenide as a Less-Hazardous Source2006

    • Author(s)
      A.Kinoshita, M.Fukaya, H.Nakanishi, M.Sugiyama, S.F.Chichibu
    • Journal Title

      Physica Status Solidi (c) 3(8)

      Pages: 2539-2542

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Use of Diethylselenide for the Preparation of CuInGaSe_2 Films by Selenization of Metal Precursors Premixed with Se2006

    • Author(s)
      M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, V.Alberts, H.Nakanishi, S.F.Chichibu
    • Journal Title

      Physica Status Solidi (c) 3(8)

      Pages: 2543-2546

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] The use of diethylselenide as a less-hazardous source in CuInGaSe_2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se2006

    • Author(s)
      M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, Y.Maru, T.Nakagawa, H.Nakanishi, V.Alberts, S.F.Chichibu
    • Journal Title

      Journal of Crystal Growth 294(2)

      Pages: 214-217

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Dielectric SiO_2/ZrO_2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method2006

    • Author(s)
      S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama
    • Journal Title

      Applied Physics Letters 88 (16)

      Pages: 161914 1-161914 3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006

    • Author(s)
      S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
    • Journal Title

      Journal of Applied Physics 99 (9)

      Pages: 093505 1-093505 6

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Preparation of High Ga-content CuInGaSe_2 Films by Selenization of Metal Precursors Using Diethylselenide as a Less-Hazardous Source2006

    • Author(s)
      A.Kinoshita, M.Fukaya, H.Nakanishi, M.Sugiyama, S.F.Chichibu
    • Journal Title

      Physica Status Solidi (c) 3 (8)

      Pages: 2539-2542

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Use of Diethylselenide for the Preparation of CuInGaSe_2 Films by Selenization of Metal Precursors Premixed with Se2006

    • Author(s)
      M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, V.Alberts, H.Nakanishi, S.F.Chichibu
    • Journal Title

      Physica Status Solidi (c) 3 (8)

      Pages: 2543-2546

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films2006

    • Author(s)
      M.Sugiyama, A.Murayama, T.Imao, K.Saiki, H.Nakanishi, S.F.Chichibu
    • Journal Title

      Physica Status Solidi (a) 203 (11)

      Pages: 2882-2886

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] The use of diethylselenide as a less-hazardous source in CuInGaSe_2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se2006

    • Author(s)
      M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, Y.Maru, T.Nakagawa, H.Nakanishi, V.Alberts, S.F.Chichibu
    • Journal Title

      Journal of Crystal Growth 294 (2)

      Pages: 214-217

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Exeiton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005

    • Author(s)
      S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
    • Journal Title

      Semiconductor Science and Technology 20

      Pages: S67-S77

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Fabrication of p-CuGaS_2 /n-ZnO : Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods2005

    • Author(s)
      S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
    • Journal Title

      Journal of Physics and Chemistry of Solids 66(11)

      Pages: 1868-1871

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005

    • Author(s)
      S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
    • Journal Title

      Semiconductor Science and Technology 20

      Pages: S67-S77

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication of p-CuGaS_2/n-ZnO : Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods2005

    • Author(s)
      S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
    • Journal Title

      Journal of Physics and Chemistry of Solids 66 (11)

      Pages: 1868-1871

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Greenish-white electroluminescence from p-type CuGaS_2 heterojunction diodes using n-type ZnO as an electron injector2004

    • Author(s)
      S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
    • Journal Title

      Applied Physics Letters 85(19)

      Pages: 4403-4405

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004

    • Author(s)
      T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
    • Journal Title

      Applied Physics Letters 85(23)

      Pages: 5586-5588

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector2004

    • Author(s)
      S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
    • Journal Title

      Applied Physics Letters 85 (19)

      Pages: 4403-4405

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004

    • Author(s)
      T.Onuma, S.F.Chichibu, A.Uedono, Y.-.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
    • Journal Title

      Applied Physics Letters 85 (23)

      Pages: 5586-5588

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2008-05-27  

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