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2005 Fiscal Year Final Research Report Summary

Development and application of a rapid analysis method of a nanostructure by direct observation of a reciprocal-lattice space using synchrotron diffraction

Research Project

Project/Area Number 16510096
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionJapan Synchrotron Radiation Research Institute

Principal Investigator

SAKATA Osami  Japan Synchrotron Radiation Research Institute, Research & Utilization Division, Senior Scientist, 利用研究促進部門・表面構造チーム・チームリーダー, 主幹研究員 (40215629)

Co-Investigator(Kenkyū-buntansha) YOSHIMOTO Mamoru  Tokyo Institute of Technology, Materials and Structures Lab., Associate Professor, 応用セラミックス研究所, 助教授 (20174998)
FUNAKUBO Hiroshi  Tokyo Institute of Technology, Interdisciplinary Graduate school of Science and Engineering, Associate Professor, 総合理工学研究科, 助教授 (90219080)
KITANO Akiko  Japan Synchrotron Radiation Research Institute, Industrial Application Division, Research Scientist, 産業利用推進室 産業利用支援チーム, 研究員 (50393319)
Project Period (FY) 2004 – 2005
KeywordsRapid diffraction method / Nanowire / Nanometer scale structure / Ultrathin film / Super-high-sensitive x-ray method / Atomic wire / Monochromatic high energy x-rays / Reciprocal-lattice space imaging
Research Abstract

We developed a nondestructive analysis method for quickly characterizing a crystalline nanostructure and applied it to structural analysis of 1D and 2D nanometer scale materials. The method, which was named "obvious-at-a-glance" x-ray method, required monochromatic high-energy x-rays in grazing incidence and an x-ray 2D detector. The basic idea behind the method is that Bragg conditions of such 1D structures are sheet shapes and get loose. The method has allowed a direct reciprocal-lattice space mapping of the x-ray intensities scattered from the ID and 2D and bears characteristics of super-high-sensitivity.
(1)Using this method, the sheet-shape diffraction emanating from ultrathin NiO wires was observed. The average nanowire-nanowire distance of 46 nm and a crystallographic domain size of approximately 15 nm across the nanowire were evaluated.
(2)We demonstrate, using x-ray diffraction, that we have taken one-dimensional Bi nanolines (atomic wires) fabricated on a Si(001) surface, and buried them in crystalline silicon while retaining both their one-dimensional characters and important aspects of their structure. In particular, after burial, the nanolines retain the two-by periodicity associated with their surface structure along their length. We have used density functional theory calculations to model a structure for these buried nanolines, whose minimum length can be estimated to be 100 nm from the coherence length of the x-ray measurements.
(3)50-nm- and 3-nm-thick Bi_4Ti_3O_<12> ferroelectric films grown on TiO_2 crystals were investigated using the method. It was determined that the thin films were monoclinic crystals.

  • Research Products

    (12 results)

All 2005 2004

All Journal Article (8 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Reciprocal -lattice space imaging of x-ray intensities diffracted from nanowires2005

    • Author(s)
      O.Sakata, A.Kitano, W.Yashiro, K.Sakamoto, K.Miki, A.Matsuda, W.Hara, S.Akiba, M.Yoshimoto
    • Journal Title

      Material Research Society Proceedings 840

      Pages: Q6.4.1-Q6.4.6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Encapsulation of atomic-scale Bi wires in epitaxial silicon without loss of structure2005

    • Author(s)
      O.Sakata, W.Yashiro, D.R.Bowler, a.Kitano, K.Sakamoto, K.Miki
    • Journal Title

      Phys. Rev. B(Rapid Communication) 72

      Pages: 081406(R)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Reciprocal-lattice space imaging of x-ray intensities diffracted from nanowires2005

    • Author(s)
      O.Sakata, A.Kitano, W.Yashiro, K.Sakamoto, K.Miki, A.Matsuda, W.Hara, S.Akiba, M.Yoshimoto
    • Journal Title

      Material Research Society Proceedings 840

      Pages: Q6.4.1-Q6.4.6

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Encapsulation of atomic-scale Bi wires in epitaxial silicon without loss of structure2005

    • Author(s)
      O.Sakata, W.Yashiro, D.R.Bowler, A.Kitano, K.Sakamoto, K.Miki
    • Journal Title

      Phys.Rev.B (Rapid Communication) 72

      Pages: 081406(R)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High-energy x-ray scattering in grazing incidence from nanometer-scale oxide wires2004

    • Author(s)
      O.Sakata, M.Takata, H.Suematsu, A.Matsuda, S.Akida, A.Sasaki, M.Yoshimoto
    • Journal Title

      Appl. Phys. Lett. 84

      Pages: 4239-4241

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-quality MgB_2 thin-film growth at a low temperature using an in-plane-lattice near-matched epitaxial-buffer layer2004

    • Author(s)
      O.Sakata, S.Kumura, M.Takata, S.Yata, T.Kato, K.Yamanaka, Y.Yamada, A.Matsushita, S.Kubo
    • Journal Title

      Journal of Applied Physics 96

      Pages: 3580-3582

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-energy x-ray scattering in grazing incidence from nanometer-scale oxide wires2004

    • Author(s)
      O.Sakata, M.Takata, H.Suematsu, A.Matsuda, S.Akiba, A.Sasaki, M.Yoshimoto
    • Journal Title

      Appl.Phys.Lett. 84

      Pages: 4239-4241

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High-quality MgB_2 thin-film growth at a low temperature using an in-plane-lattice near-matched epitaxial-buffer layer2004

    • Author(s)
      O.Sakata, S.Kimura, M.Takata, S.Yata, T.Kato, K.Yamanaka, Y.Yamada, A.Matsushita, S.Kubo
    • Journal Title

      Journal of Applied Physics 96

      Pages: 3580-3582

    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] 特許2005

    • Inventor(s)
      坂田修身
    • Industrial Property Rights Holder
      財団法人高輝度光科学研究センター
    • Industrial Property Number
      特願2005-100449
    • Filing Date
      2005-03-31
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 特許2005

    • Inventor(s)
      坂田修身
    • Industrial Property Rights Holder
      財団法人高輝度光科学研究センター
    • Industrial Property Number
      特願2005-11671
    • Filing Date
      2005-04-14
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 特許2005

    • Inventor(s)
      坂田修身
    • Industrial Property Rights Holder
      財団法人高輝度光科学研究センター
    • Industrial Property Number
      U. S. Patent Application No.11/128,415
    • Filing Date
      20059000
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 特許2004

    • Inventor(s)
      坂田修身, 北野彰子
    • Industrial Property Rights Holder
      財団法人高輝度光科学研究センター
    • Industrial Property Number
      特願2004-144473
    • Filing Date
      2004-05-14
    • Description
      「研究成果報告書概要(和文)」より

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Published: 2007-12-13  

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