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2006 Fiscal Year Final Research Report Summary

Research on fundamental technologies for processing of electronic materials by synchrotron light-excited process

Research Project

Project/Area Number 16560012
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionSaga University

Principal Investigator

NISHIO Mitsuhiro  Saga Univ., Fac. Of Sci. & Eng., Professor, 理工学部, 教授 (60109220)

Co-Investigator(Kenkyū-buntansha) OGAWA Hiroshi  Saga Univ., Synctrotron light research center, Professor, シンクロトロン応用研究センター, 教授 (10039290)
TANAKA Tooru  Saga Univ., Synctrotron light research center, Assistant, シンクロトロン応用研究センター, 助手 (20325591)
Project Period (FY) 2004 – 2006
KeywordsSynchrotron light-excited process / Electronic material / etching / epitaxial growth
Research Abstract

Synchrotron light-excited etching of ZnTe as an example of electronic material has been demonstrated. In the case of SF_6 gas, the ZnTe was not etched but thin film of a fluorine containing material, e.g. ZnF2, was deposited on the surface of ZnTe. On the other hand, ZnTe was etched effectively by using Ar gas under the negative sample bias to the sample. The etched pattern obtained by placing a Ni mesh showed that only the irradiated area was etched. The etching mechanism has been investigated. A new beamline for the development of advanced materials and processing has been designed and constructed in order to utilize synchrotron light source built by Saga Prefectural Government. Furthermore, the processing of electronic materials containing epitaxial growth, doping, etching and annealing procedures has been carried out in our laboratory as prelimary experiments for the processing using synchrotron light.

  • Research Products

    (10 results)

All 2007 2006

All Journal Article (9 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Design of Beamline BL9 at Saga Light Source2007

    • Author(s)
      Tooru Tanaka, Hiroshi Ogawa, Masao Kamada, Mitsuhiro Nishio, Masataka Masuda, Qixin Guo, Kazuki Hayashida, Yuzi Kondo, Teruaki Motooka, Daisuke Yoshimura, Hiroyuki Setoyama, Toshihiro Okajima
    • Journal Title

      AIP series of conference proceedings 879

      Pages: 559

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Study of Al thermal diffusion in ZnTe by secondary ion mass spectroscopy2007

    • Author(s)
      Tooru Tanaka, Norihiro Murata, Katsuhiko Saito, Qixin Guo, Mitsuhiro Nishio, Hiroshi Ogawa
    • Journal Title

      physica status solidi (b) (in press)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus2007

    • Author(s)
      Tooru Tanaka, Mitsuhiro Nishio, Kazuki Hayashida, Kenji Fujimoto, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 437-440

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy2007

    • Author(s)
      Katsuhiko Saito, Tetsuo Yamashita, Daisuke Kouno, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 449-452

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Low-pressure metalorganic vapor phase epitaxy growth of ZnTe2007

    • Author(s)
      Yusuke Kume, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Wenzhong She
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 441-444

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Design of Beamline BL9 at Saga Light Source2007

    • Author(s)
      Tooru Tanaka, Hiroshi Ogawa, Masao Kamada, Mitsuhiro Nishio, Masataka Masuda, Qixin Guo, Kazuki Hayashida, Yuzi Kondo, Teruaki Motooka, Daisuke Yoshimura, Hiroyuki Setoyama, Toshihiro Okajima
    • Journal Title

      AIP series of conference proceedings Vol.879

      Pages: 559-562

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus2007

    • Author(s)
      Tooru Tanaka, Mitsuhiro Nishio, Kazuki Hayashida, Kenji Fujimoto, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Journal of Crystal Growth Vol.298

      Pages: 437-440

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth Characteristics of ZnMgTe Layer on ZnTe Substrate by Metalorganic Vapor Phase Epitaxy2007

    • Author(s)
      Katsuhiko Saito, Tetsuo Yamashita, Daisuke Kouno, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Journal of Crystal Growth Vol.298

      Pages: 449-452

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Low-pressure metalorganic vapor phase epitaxy growth of ZnTe2007

    • Author(s)
      Yusuke Kume, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Wenzhong She
    • Journal Title

      Journal of Crystal Growth Vol.298

      Pages: 441-444

    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] 半導体の製造方法2006

    • Inventor(s)
      田中徹, 小川博司, 西尾光弘, 齋藤勝彦
    • Industrial Property Rights Holder
      佐賀大学
    • Industrial Property Number
      特願2006-222455(特許)
    • Filing Date
      20060800
    • Description
      「研究成果報告書概要(和文)」より

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Published: 2008-05-27  

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