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2006 Fiscal Year Final Research Report Summary

Light up-conversion mechanism of type-II dual sub-band superlattices

Research Project

Project/Area Number 16560015
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionHokkaido Institute of Technology

Principal Investigator

IMAI Kazuaki  Hokkaido Institute of Technology, Dept. Engineering, Professor, 工学部, 教授 (40001987)

Co-Investigator(Kenkyū-buntansha) KIMURA Nobuyuki  Hokkaido Institute of Technology, Comprehensive Education Center, Professor, 総合教育研究部, 教授 (10204984)
SAWADA Takayuki  Hokkaido Institute of Technology, Dept. Engineering, Professor, 工学部, 教授 (40113568)
SUZUKI Kazuhiko  Hokkaido Institute of Technology, Dept. Engineering, Professor, 工学部, 教授 (30226500)
Project Period (FY) 2004 – 2006
KeywordsII-VI compound semiconductor / superlattice / Type-II band structure / MBE growth
Research Abstract

The super-structured superlattice which consists of two kinds of single period superlattices with different quantum levels (dual sub-band (DSB) superlattice) shows two PL peaks. Under the excitation with the light with the mid-energy between the PL peaks, the DSB sample emits the peak at the upper energy side additionally to the lower side peak. We call this phenomena as light up-conversion effect. In this investigation, we study the mechanism in the type-II ZnSe-ZnTe superlattice.
The dependences of the energy and intensity of PL peaks on the excitation intensity on the samples with various structures were measured. Under the excitation with the light of Ar^+ laser (488 nm, 2.54 eV), all the samples have two PL peaks at both sides of the He-Ne line (633 nm, 1.96 eV). Under the excitation with He-Ne, all the samples indicate both peaks. The PL peak at the higher energy side is the up-converted light.
All the n values in the presentation of the excitation intensity dependence of the emission intensity (I_<em>〜I_<ex>^n) of the up-converted peaks were over 1.3. The sample with thin ZnSe parts (barriers in V.B.) has the value of n of 1.7. The energies of all the PL peaks indicate the blue shift with increasing the excitation intensity.
The mechanism of the up-conversion effect involves two steps process with the tunneling effect in V.B. and the recombination between the type-II levels.

  • Research Products

    (43 results)

All 2007 2006 2005 2004

All Journal Article (43 results)

  • [Journal Article] Deep emissions of NBE-ZnTe on tilted GaAs substrate2007

    • Author(s)
      G.Shigaura et al.
    • Journal Title

      J. Cryst. Growth vol. 301-302

      Pages: 297-300

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Light up-conversion mechanism of ZnSe-ZnTe superlattices2007

    • Author(s)
      M.Ohashi et al.
    • Journal Title

      J. Cryst. Growth vol. 301-302

      Pages: 306-309

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] ZnSeTe混晶のMBE成長と光学的評価2007

    • Author(s)
      金森 真広 他
    • Journal Title

      北海道工業大学研究紀要 第35号

      Pages: 261-264

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] MBE-ZnSe-ZnTe超格子による波長変換効果2007

    • Author(s)
      一戸 善弘 他
    • Journal Title

      北海道工業大学研究紀要 第35号

      Pages: 303-308

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] GaAs傾斜基板上MBE-ZnTeの深い発光2007

    • Author(s)
      志賀浦 豪一 他
    • Journal Title

      北海道工業大学研究紀要 第35号

      Pages: 339-343

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Deep emissions of NBE-ZnTe on tilted GaAs substrate2007

    • Author(s)
      G.Shigaura et al.
    • Journal Title

      J. Cryst. Growth vol.301-302

      Pages: 297-300

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Light up-conversion mechanism of ZnSe-ZnTe superlattices2007

    • Author(s)
      M.Ohashi et al.
    • Journal Title

      J. Cryst. Growth vol.301-302

      Pages: 306-309

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] MBE growth and optical evaluation of ZnSeTe alloys2007

    • Author(s)
      M.Kanamori et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.35

      Pages: 261-264

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth of InN layers by RF-MBE and characterization of their layers2007

    • Author(s)
      K.Ise et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.35

      Pages: 295-302

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Wave up-conversion for MBE-ZnSe-ZnTe superlattices2007

    • Author(s)
      Y.Ichinohe et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.35

      Pages: 303-308

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Deep emissions of MBE-ZnTe on tilted GaAs substrate2007

    • Author(s)
      G.Shigaura et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.35

      Pages: 339-343

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effects of sub-gap irradiation on the time-of-flight current waveforms of high resistivity CdTe2006

    • Author(s)
      K.Suzuki et al.
    • Journal Title

      phys. stat. sol. (c) vol. 3, no. 4

      Pages: 1130-1134

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Electrical properties of Ni/i-AlGaN/GaN structures and influence of thermal annealing2006

    • Author(s)
      T.Sawada et al.
    • Journal Title

      phys. stat. sol. (c) vol. 3, no. 6

      Pages: 1704-1708

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Al_xGa_<1-x>N単層膜およびAlGaN/GaNヘテロ構造のMBE成長と評価2006

    • Author(s)
      米田 里志 他
    • Journal Title

      北海道工業大学研究紀要 第34号

      Pages: 185-191

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] ZnSe-ZnTe超格子におけるフォトルミネッセンスの励起光強度依存性II2006

    • Author(s)
      大橋 雅浩 他
    • Journal Title

      北海道工業大学研究紀要 第34号

      Pages: 193-199

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] MBE-ZnTe薄膜の熱処理効果2006

    • Author(s)
      志賀浦 豪一 他
    • Journal Title

      北海道工業大学研究紀要 第34号

      Pages: 201-205

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] MBE-ZnSe薄膜における熱処理効果2006

    • Author(s)
      一戸 善弘 他
    • Journal Title

      北海道工業大学研究紀要 第34号

      Pages: 207-209

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Effects of sub-gap irradiation on the time-of-flight current waveforms of high resistivity CdTe2006

    • Author(s)
      K.Suzuki et al.
    • Journal Title

      phys. stat. sol. (c) vol.3,No.4

      Pages: 1130-1134

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Electrical properties of Ni/i-AlGaN/GaN structures and influence of thermal annealing2006

    • Author(s)
      T.Sawada et al.
    • Journal Title

      phys. stat. sol. (c) vol.3,No.6

      Pages: 1704-1708

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] MBE growth and characterization of Al_xGa_<1-x>N layers and AlGaN/GaN heterostructures2006

    • Author(s)
      S.Yoneta et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.34

      Pages: 185-191

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Excitation intensity dependence of photoluminescence in ZnSe-ZnTe superlattices II2006

    • Author(s)
      M.Ohashi et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.34

      Pages: 193-199

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Annealing effects of ZnTe films grown by molecular beam epitaxy2006

    • Author(s)
      G.Shigaura et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.34

      Pages: 201-205

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Annealing effects of ZnSe films grown by MBE2006

    • Author(s)
      Y.Ichinohe et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.34

      Pages: 207-209

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Excitation intensity dependence of up-converted emission in ZnSe-ZnTe superlattice grown by MBE2005

    • Author(s)
      M.Ohashi et al.
    • Journal Title

      J. Cryst. Growth vol. 178

      Pages: 320-324

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Spectroscopic properties of retinal molecules in LB films2005

    • Author(s)
      Na.Kimura et al.
    • Journal Title

      Colloids Surface A vol. 257-258

      Pages: 221-223

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] ZnSe-ZnTe超格子におけるフォトルミネッセンスの励起光強度依存性2005

    • Author(s)
      大橋 雅浩 他
    • Journal Title

      北海道工業大学研究紀要 第33号

      Pages: 277-282

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Ni/n-(Al)GaNショットキ-の電気的特性 -MBE膜とMOCVD膜の比較-2005

    • Author(s)
      米田 里志 他
    • Journal Title

      北海道工業大学研究紀要 第33号

      Pages: 293-300

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Excitation intensity dependence of up-converted emission in ZnSe-ZnTe superlattice grown by MBE2005

    • Author(s)
      M.Ohashi et al.
    • Journal Title

      J. Cryst. Growth vol.278

      Pages: 320-324

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Spectroscopic properties of retinal molecules in LB films2005

    • Author(s)
      Na.Kimura et al.
    • Journal Title

      Colloids Surface A vol.257-258

      Pages: 221-223

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Excitation intensity dependence of photoluminescence in ZnSe-ZnTe superlattices2005

    • Author(s)
      M.Ohashi et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.33

      Pages: 277-282

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Electrical properties of Ni/n-(A1)GaN Schottky contacts-Comparison between MBE and MOCVD layers-2005

    • Author(s)
      S.Yoneta et al.
    • Journal Title

      Memoirs Hokkaido Inst. Tech. No.33

      Pages: 239-300

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Photomagnetoelectric effect of high resistivity CdTe2004

    • Author(s)
      K.Suzuki et al.
    • Journal Title

      phys. stat. sol. (c) vol. 1, no. 4

      Pages: 666-669

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Cleaning effect of ZnSe surface by hydrogen treatment2004

    • Author(s)
      Y.Sasaki et al.
    • Journal Title

      phys. stat. sol. (c) vol. 1, no. 4

      Pages: 670-673

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] The origin of free exciton-like emission in ZnSeTe alloy2004

    • Author(s)
      Y.Sasaki et al.
    • Journal Title

      phys. stat. sol. (c) vol. 1, no. 4

      Pages: 827-830

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Light up-conversion effect of ZnSe-ZnTe superlattices grown on ZnSe by MBE2004

    • Author(s)
      Y.Sasaki et al.
    • Journal Title

      phys. stat. sol. (c) vol. 1, no. 4

      Pages: 993-996

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Interpretation of current transport properties at Ni/n-GaN Shottoky interfaces2004

    • Author(s)
      T.Sawada et al.
    • Journal Title

      J. Vac. Sci. Tech. B vol. 22, no. 4

      Pages: 2051-2058

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Molecular Beam Epitaxial Growth of GaN using Ammonia Cluster Ion Beam as a Nitrgen Source2004

    • Author(s)
      H.Saito et al.
    • Journal Title

      phys. stat. sol. (c) vol. 1, no. 10

      Pages: 2478-2482

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Photomagnetoelectric effect of high resistivity CdTe2004

    • Author(s)
      K.Suzuki et al.
    • Journal Title

      phys. stat. sol. (c) vol.1,No.4

      Pages: 666-669

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Cleaning effect of ZnSe surface by hydrogen treatment2004

    • Author(s)
      Y.Sasaki et al.
    • Journal Title

      phys. stat. sol. (c) vol.1,No 4

      Pages: 670-673

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] The origin of free exciton-like emission in ZnSeTe alloy2004

    • Author(s)
      Y.Sasaki et al.
    • Journal Title

      phys. stat. sol. (c) vol.1,No.4

      Pages: 827-830

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Light up-conversion effect of ZnSe-ZnTe superlattices grown on ZnSe by MBE2004

    • Author(s)
      Y.Sasaki et al.
    • Journal Title

      phys. stat. sol. (c) vol.1,No.4

      Pages: 993-996

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Molecular Beam Epitaxial Growth of GaN using Ammonia Cluster Ion Beam as a Nitrogen Source2004

    • Author(s)
      H.Saito et al.
    • Journal Title

      phys. stat. sol. (c) vol.1,No.10

      Pages: 2478-2482

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Interpretation of current transport properties at Ni/n-GaN Shottoky interfaces2004

    • Author(s)
      T.Sawada et al.
    • Journal Title

      J. Vac. Sci. Tech. B vol.22,No.4

      Pages: 2051-2058

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2008-05-27  

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