2005 Fiscal Year Final Research Report Summary
A Study of High Quality Beta-Irondisilicides formed on (001) Silicon Substrates by a Vacuum Deposition Method and the Fabrication of Light Emitting Diodes
| Project/Area Number |
16560017
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | KANAZAWA INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
ISHII Makoto KANAZAWA INSTITUTE OF TECHNOLOGY, College of Engineering, Professor, 工学部, 教授 (30222946)
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| Co-Investigator(Kenkyū-buntansha) |
MIYATA Toshihiro KANAZAWA INSTITUTE OF TECHNOLOGY, College of Engineering, Associate Professor, 工学部, 助教授 (30257448)
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| Project Period (FY) |
2004 – 2005
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| Keywords | iron disilicide / iron / vacuum deposition / thin film / silicon / epitaxy / high purity / heterojunction |
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| Research Abstract |
Strongly a-axis oriented (β-FeSi_2 layers on Si(001) substrates were formed when the substrates were heated at a temperature of 700℃, and iron deposition rate on Si(001) substrates was about 0.5nm/min using a vacuum evaporation method. N-type β-FeSi_2 layers were formed on Si(001) substrates at a temperature of 700℃ with evaporating different kinds of iron sources. The lowest carrier concentration is 1.3x10^<16>cm^<-3> and mobility is as high as 303cm^<-2>/Vs at room temperature. It is found from secondary ion analysis of iron sources and β-FeSi_2-formed-layers that the dominant impurity is cobalt. The influence of environment gases on the carrier concentrations in β-FeSi_2- formed-layers is also discussed. P-Si/β-FeSi_2/n-Si(001) substrate structure was formed and diodes were fabricated. The ideal factor of the current-voltage characteristics was as well as 1.27.
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Research Products
(5 results)
