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2005 Fiscal Year Final Research Report Summary

Theoretical studies on the behaviors of impurities in high-k gate dielectrics.

Research Project

Project/Area Number 16560020
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionUniversity of Tsukuba

Principal Investigator

SHIRAISHI Kenji  University of Tsukuba, Graduate School of Pure and Applied Physics, Associate Professor, 大学院・数理物質科学研究科, 助教授 (20334039)

Co-Investigator(Kenkyū-buntansha) AKIYAMA Toru  Mie University, Department of Engineering, Research Assistant, 工学部, 助手 (40362363)
Project Period (FY) 2004 – 2005
KeywordsLSI / Silicon / Semiconductor / Defects / Impurity / Insulating films / High-k dielectrics / Interface Reaction
Research Abstract

In this project, we have investigated the physical properties of defects in high-k HfO_2 dielectrics and the formation process of interface layer SiO_2 located between high-k dielectrics and Si substrates. The main results are as follows.
(1)Based on the ionic characteristic of HfO_2, we have discussed the mechanism of Fermi level pinning observed at the interface between p+poly-Si gates and high-k HfO_2 dielectrics. As a result, we have found that the oxygen vacancy formation accompanied by the partial oxidation of poly-Si gates becomes endothermic due to the energy gain of electron transfer from oxygen vacancy level in Hf02 to p+poly-Si gates, and this reaction generates the interface dipoles and Fermi level of p+ poly-Si gates elevates. Further, this reaction continues until the energy gain of this reaction decreases to zero at the pinning position.
(2)We have investigated the N incorporation effect by the first principles calculations. We have found that N incorporation deactivate the oxygen vacancy level that is located just above the conduction band bottom of Si and can be considered as a important leakage path of HfO_2 gate dielectrics. This deactivation originates from the Coulomb interaction of N impurities.
(3)We have considered the formation process of interfacial SiO_2 by the first principles calculations. We have found that the strain near the interface strongly affects the formation process of SiO_2. Since the strain release process of the formation of interfacial SiO_2 is much different from the usual silicon thermal oxidation, the formed interfacial SiO_2 characteristics should be different from ordinary thermally grown SiO_2.

  • Research Products

    (67 results)

All 2006 2005 2004 Other

All Journal Article (67 results)

  • [Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006

    • Author(s)
      H.Kageshima
    • Journal Title

      Jap. J. of Appl. Phys. 45

      Pages: 694-699

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Unique behavior of F-centers in high-k Hf-based Oxide2006

    • Author(s)
      N.Umezawa
    • Journal Title

      Physica B 376-377

      Pages: 392-394

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Mechanism of oxide deformation during silicon thermal oxidation2006

    • Author(s)
      H.Kageshima
    • Journal Title

      Physica B 376-377

      Pages: 407-410

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positoron beams2006

    • Author(s)
      A.Uedono
    • Journal Title

      J. Appl. Phys. 99

      Pages: 054507

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Effect of N atom doping on dielectric constants of Hf-based gate oxides"2006

    • Author(s)
      H.Momida
    • Journal Title

      Appl. Phys. Lett. 88

      Pages: 112903

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Enhanced Si and B diffusion in semiconductor-grade SiO_2 and the effect of strain on diffusion2006

    • Author(s)
      M.Uematsu
    • Journal Title

      Thin Solid Films 508

      Pages: 270-275

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks"2006

    • Author(s)
      K.Shiraishi
    • Journal Title

      Thin Solid Films 508

      Pages: 305-310

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] A first-principles study of O_2 diffusion in compressively strained high-fensity silicon oxides2006

    • Author(s)
      Toru Akiyama
    • Journal Title

      Thin Solid Films 508

      Pages: 311-314

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides2006

    • Author(s)
      N.Umezawa
    • Journal Title

      Trans. Material Res. Soc. Jpn. 31

      Pages: 129-132

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006

    • Author(s)
      H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi.
    • Journal Title

      Jap.J.of Appl.Phys. 45

      Pages: 694-699

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Unique behavior of F-centers in high-k Hf-based Oxide2006

    • Author(s)
      N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
    • Journal Title

      Physica B 376-377

      Pages: 392-394

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Mechanism of oxide deformation during silicon thermal oxidation2006

    • Author(s)
      H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
    • Journal Title

      Physica B 376-377

      Pages: 407-410

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positoron beams2006

    • Author(s)
      A.Uedono, K.Ikeuchi, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, N.Umezawa, A.Hamid, T.Chikyow, T.Ohdaira, M.Muramatsu, R.Suzuki, S.Inumiya, S.Kamiyama, Y.Akasaka, Y.Nara, K.Yamada
    • Journal Title

      J.Appl.Phys. 99

      Pages: 054507

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effect of N atom doping on dielectric constants of Hf-based gate oxides2006

    • Author(s)
      H.Momida, T.Hamada, T.Yamamoto, T.Uda, N.Umezawa, T.Chikyow, K.Shiraishi, T.Ohno
    • Journal Title

      Appl.Phys.Lett. 88

      Pages: 112903

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion2006

    • Author(s)
      M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
    • Journal Title

      Thin Solid Films 508

      Pages: 270-275

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks2006

    • Author(s)
      K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
    • Journal Title

      Thin Solid Films 508

      Pages: 305-310

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A first-principles study of O_2 diffusion in compressively strained high-fensity silicon oxides2006

    • Author(s)
      Toru Akiyama, Keiichi Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Kohji Nakamura, Tomonori Ito
    • Journal Title

      Thin Solid Films 508

      Pages: 311-314

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005

    • Author(s)
      N.Umezawa
    • Journal Title

      Appl. Phys. Lett. 86

      Pages: 143507

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Reaction mechanisms of oxygen at SiO_2/Si(100) interface2005

    • Author(s)
      T.Akiyama
    • Journal Title

      Surface Science 576

      Pages: L65-L70

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] First-principles study of excess Si-atom stability around Si oxide/Si interfaces2005

    • Author(s)
      H.Kageshima
    • Journal Title

      Proceedings of the 27th International Conference on the Physics of Semiconductors

      Pages: 389-390

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Microscopic theory of oxygen reaction mechanisms at SiO_2/Si(100) interface2005

    • Author(s)
      Toru Akiyama
    • Journal Title

      Proceedings of the 27th International Conference on the Physics of Semiconductors

      Pages: 393-394

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Atomic Processes at and near Silicon/Silicon Dioxide interfaces2005

    • Author(s)
      K.Shiraishi
    • Journal Title

      Proceedings of the 27th International Conference on the Physics of Semiconductors

      Pages: 427-430

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Theoretical investigation of oxygen diffusion in compressively strained high-density α-quartz2005

    • Author(s)
      T.Akiyama
    • Journal Title

      Jap. J. of Appl. Phys. 44

      Pages: 7427-7429

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005

    • Author(s)
      M.Uematsu
    • Journal Title

      Jap. J. Appl. Phys. PART 1, (2005) 44

      Pages: 7756-7759

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005

    • Author(s)
      H.Watanabe
    • Journal Title

      Jap. J. Appl. Phys. PART 2 44

      Pages: L1333-L1336

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlO_x formed by D_2O-ALD2005

    • Author(s)
      K.Torii
    • Journal Title

      IEEE Electron Device Lett. 26

      Pages: 722-724

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Impact of Electrode-side Chemical Structures on Electron Mobility in Metal/HfO2 MISFETs with sub-1nm EOT2005

    • Author(s)
      Y.Akasaka
    • Journal Title

      Technical Digest of 2005 Symposium on VLSI Technology, Kyoto, Japan

      Pages: 228-229

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-2005

    • Author(s)
      K.Shiraishi
    • Journal Title

      Technical Digest of IEEE International Electron Devices Meeting, Washington D.C.

      Pages: 43-46

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] HfO_2系high-kゲート絶縁膜の信頼性劣化機構モデル2005

    • Author(s)
      鳥居和功
    • Journal Title

      応用物理 74

      Pages: 1211-1216

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO_2 interfaces2005

    • Author(s)
      T.Nakaoka
    • Journal Title

      Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan

      Pages: 860-861

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate2005

    • Author(s)
      H.Momida
    • Journal Title

      Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan

      Pages: 488-489

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] The Role of Nitrogen Incorporation in Hf-based High-k Dielectrics : Reduction in Electron Charge Traps2005

    • Author(s)
      N.Umezawa
    • Journal Title

      Proceedings of 35^<th> European Solid-State Device Research Conference, Grenoble, France.

      Pages: 201-204,

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005

    • Author(s)
      N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikow, K.Torii, K.Yamabe, H.Kitajima, T.Arikado
    • Journal Title

      Appl.Phys.Lett. 86

      Pages: 143507

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Reaction mechanisms of oxygen at SiO_2/Si(100) interface2005

    • Author(s)
      T.Akiyama, H.Kageshima
    • Journal Title

      Surface Science 576

      Pages: L65-L70

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] First-principles study of excess Si-atom stability around Si oxide/Si interfaces2005

    • Author(s)
      H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
    • Journal Title

      Proceedings of the 27th International Conference on the Physics of Semiconductors

      Pages: 389-390

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Microscopic theory of oxygen reaction mechanisms at SiO_2/Si(100) interface2005

    • Author(s)
      Toru Akiyama, Hiroyuki Kageshima, Tomonori Ito
    • Journal Title

      Proceedings of the 27th International Conference on the Physics of Semiconductors

      Pages: 393-394

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Theoretical investigation of oxygen diffusion in compressively strained high-density α-quartz2005

    • Author(s)
      T.Akiyama, H.Kageshima, M.Uematsu, T.Ito
    • Journal Title

      Jap.J.of Appl.Phys. 44

      Pages: 7427-7429

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005

    • Author(s)
      M.Uematsu, H.Kageshima, K.Shiraishi
    • Journal Title

      Jap.J.Appl.Phys.PART 1 44

      Pages: 7756-7759

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005

    • Author(s)
      H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi, S.Yoshida, Y.Watanabe, T.Arikado, T.Chikyow, K.Yamada, K.Yasutake
    • Journal Title

      Jap.J.Appl.Phys.PART 2 44

      Pages: L1333-L1336

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005

    • Author(s)
      K.Torii, T.Kawahara, K.Shiraishi
    • Journal Title

      IEEE Electron Device Lett. 26

      Pages: 722-724

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Impact of Electrode-side Chemical Structures on Electron Mobility in Metal/HfO2 MISFETs with sub-1nm EOT2005

    • Author(s)
      Y.Akasaka, K.Miyagawa, T.Sasaki, K.Shiraishi, S.Kamiyama, O.Ogawa, F.Ootsuka, Y.Nara
    • Journal Title

      Technical Digest of 2005 Symposium on VLSI Technology, Kyoto, Japan

      Pages: 228-229

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-2005

    • Author(s)
      K.Shiraishi, Y.Akasaka, S.Miyazaki, T.Nakayama, T.Nakaoka, G.Nakamura, K.Torii, H.Furutou, A.Ohta, P.Ahmet, K.Ohmori, H.Watanabe, T.Chikyow, M.L.Green, Y.Nara, K.Yamada
    • Journal Title

      Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA

      Pages: 43-46

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Reliability degradation model of HfO_2 related high-k gate dielectrics2005

    • Author(s)
      K.Torii, K.Shiraishi, S.Miyazaki, K.Yamada
    • Journal Title

      Ouyobutsuri 74

      Pages: 1211-1216

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] First-principles studies on metal induced gap states(MIGS) at metal/high-k HfO_2 interfaces2005

    • Author(s)
      T.Nakaoka, K.Shiraishi, Y.Akasaka, T.Chikyow, K.Yamada, Y.Nara
    • Journal Title

      Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan

      Pages: 860-861

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate2005

    • Author(s)
      H.Momida, T.Hamada, T.Yamamoto, T.Uda, N.Umezawa, K.Shiraishi, T.Chikyow, T.Ohno
    • Journal Title

      Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan

      Pages: 488-489

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Correlated diffusion of silicon and boron in thermally grown SiO_22004

    • Author(s)
      M.Uematsu
    • Journal Title

      Appl. Phys. Lett. 85

      Pages: 221-223

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Simulation of correlated diffusion of Si and B in thermally grown SiO_22004

    • Author(s)
      M.Uematsu
    • Journal Title

      J. Appl. Phys. 96

      Pages: 5513-5519

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_22004

    • Author(s)
      S.Fukatsu
    • Journal Title

      Jap. J. Appl. Phys. 43

      Pages: 7837-7842

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces2004

    • Author(s)
      H.Kageshima
    • Journal Title

      Jap. J. Appl. Phys. Part 1 43

      Pages: 8223-8226

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Physical model of BTI, TDDB, and SILC in HfO_2-based high-k dielectrics2004

    • Author(s)
      K.Torii
    • Journal Title

      Tech. Digest of 2004 IEEE International Electron Device Meeting (San Francisco, USA, December 13-15, 2004)

      Pages: 129-132

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004

    • Author(s)
      K.Shiraishi
    • Journal Title

      Tech. Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)

      Pages: 108-109

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-k MISFET with p^+poly-Si Gates -A Theoretical Approach2004

    • Author(s)
      K.Shiraishi
    • Journal Title

      Jpn. J. Appl. Phys. Part 2, Express Letter 43

      Pages: L1413-L1415

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] 多くの現象を説明できる新モデル「酸素空孔説」を提案2004

    • Author(s)
      白石賢二
    • Journal Title

      日経マイクロデバイス 10月号

      Pages: 55-58

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004

    • Author(s)
      A.Uedono
    • Journal Title

      Jpn. J. Appl. Phys. Part 1 43

      Pages: 7847-7852

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] First-principles analyses of O_2 molecules around ultrathin SiO_2/Si(100) interface2004

    • Author(s)
      T.Akiyama
    • Journal Title

      Jap. J. of Appl. Phys, 43

      Pages: 7903-7908

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Correlated diffusion of silicon and boron in thermally grown SiO_22004

    • Author(s)
      M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
    • Journal Title

      Appl.Phys.Lett. 85

      Pages: 221-223

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Simulation of correlated diffusion of Si and B in thermally grown Si O_22004

    • Author(s)
      M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
    • Journal Title

      J.Appl.Phys. 96

      Pages: 5513-5519

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_22004

    • Author(s)
      S.Fukatsu, K.M.Itoh, M.Uematsu, H.Kageshima, Y.Takahashi, K.Shiraishi
    • Journal Title

      Jap.J.Appl.Phys. 43

      Pages: 7837-7842

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces2004

    • Author(s)
      H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
    • Journal Title

      Jap.J.Appl.Phys.Part 1 43

      Pages: 8223-8226

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Physical model of BTI, TDDB, and SILC in HfO_2-based high-k dielectrics2004

    • Author(s)
      K.Torii, K.Shiraishi, S.Miyazaki, K.Yamabe, M.Boero, T.Chikyow, K.Yamada, H.Kitajima, T.Arikado
    • Journal Title

      Tech.Digest of 2004 IEEE International Electron Device Meeting (San Francisco, USA, December 13-15, 2004)

      Pages: 129-132

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004

    • Author(s)
      K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado
    • Journal Title

      Tech.Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)

      Pages: 108-109

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-k MISFET with p+poly-Si Gates -A Theoretical Approach2004

    • Author(s)
      K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado
    • Journal Title

      Jpn.J.Appl.Phys.Part 2, Express Letter 43

      Pages: L1413-L1415

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Proposal of a new O-vacancy model that can explain many phenomena2004

    • Author(s)
      K.Shiraishi, K.Yamada, T.Chikyow
    • Journal Title

      Nikkei Micro Device Vol.10

      Pages: 55-58

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004

    • Author(s)
      A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
    • Journal Title

      Jpn.J.Appl.Phys.Part 1 43

      Pages: 7847-7852

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] First-principles analyses of O_2 molecules around ultrathin SiO_2/Si(100) interface2004

    • Author(s)
      T.Akiyama, H.Kageshima, T.Ito
    • Journal Title

      Jap.J.of Appl.Physi. 43

      Pages: 7903-7908

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] The Role of Nitrogen Incorporation in Hf-based High-k Dielectrics : Reduction in Electron Charge Traps

    • Author(s)
      N.Umezawa, K.Shiraishi, K.Torii, M.Boero, T.Chikyow, H.Watanabe, K.Yamabe, T.Ohno, K.Yamada, Y.Nara
    • Journal Title

      Proceedings of 35^<th> European Solid-State Device Research Conference (ESSDERC 2005)(12-16 September 2005, Grenoble, France.)

      Pages: 201-204

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides

    • Author(s)
      N.Umezawa, K.Shiraishi, Y.Akasaka, S.Inumiya, A.Uedono, S.Miyazaki, T.Chikyow, T.Ohno, Y.Nara, K.Yamada
    • Journal Title

      Trans.Material Res.Soc.Jpn. 31

      Pages: 129-132

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2007-12-13  

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