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2005 Fiscal Year Final Research Report Summary

Research of compact bright UV lamp using nitride semiconductor nano-phosphor and cold cathode

Research Project

Project/Area Number 16560296
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionShizuoka University

Principal Investigator

INOUE Yoku  Shizuoka Univ., Engineering, assistants, 工学部, 助手 (90324334)

Co-Investigator(Kenkyū-buntansha) MIMURA Hidenori  Shizuoka univ., Research Institute of Electronics, Professor, 電子工学研究所, 教授 (90144055)
ISHIDA Akihiro  Shizuoka univ., Engineering, Professor, 工学部, 教授 (70183738)
NAKANISHI Yoichiro  Shizuoka univ., Research Institute of Electronics, Professor, 電子工学研究所, 教授 (00022137)
Project Period (FY) 2004 – 2005
KeywordsGaN nanocrystals / nano-phosohor / nanowires / carbon nanotube / UV lamp
Research Abstract

We researched deep-UV lamp which light originates from GaN nanostructures. The size of prepared GaN nano-phosphor is 200 nm in diameter. From transmission electron microscopy (TEM) observation, the nano-phospor is single crystal, and has no dislocations, which means that crystal quality is very high. The GaN nano-phosphor showed strong band-edge luminescence. The good optical properties resulted from high crystal quality of GaN nanocrystals. To shorten the emitted wavelength, AlGaN nano-phosphors were prepared. With increasing the Al content, emitted wavelength was shifted shorter region to 346 nm.
As materials for cold cathode of the UV lamp, GaN nanowires and carbon nanotubes (CNT) were grown. GaN nanowires were grown by vapor-solid-liquid growth mode. The diameter and length of the GaN nanowires were 20 nm and over 5μm, respectively. Field electron emission from GaN nanowires was measured. The electron emission was observed and the turn-on field was 13 V/μm. As the growth method of CNT, we established a new CNT growth method which the formation of catalytic nano-particles and the growth of CNT were carried continuously in an identical growth chamber. Both the catalytic nano-particles and CNT were grown by thermal chemical vapor deposition. The growth of multi-walled CNT was found by TEM observation. Field emission properties of the CNT were measured. Threshold field and current density were 9 V/μm and > 100 μA/cm^2, respectively. These are good results which imply a possibility of CNT electron emitter for the UV lamp.
We made a prototype of UV lamp consisting of the GaN nano-phospor and cold cathode. We obtained UV emission from the lamp. The UV lamp has a monochromatic spectrum, which a peak centered at 366 nm corresponding to the energy gap of GaN.

  • Research Products

    (15 results)

All 2006 2005 2004

All Journal Article (14 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Resonant-tunneling electron emitter in an AlN/GaN system2005

    • Author(s)
      A.Ishida, Y.Inoue, H.Fujiyasu
    • Journal Title

      Appl. Phys. Lett. 86

      Pages: 183102

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth of Pillarlike GaN Nanostructures2005

    • Author(s)
      S.Takeda, K.Ishino, Y.Inoue, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi, S.Sakakibara
    • Journal Title

      Jpn. J. App. Phys. 44

      Pages: 5664

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] n3N2 compensated ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy2005

    • Author(s)
      S.Sakakibara, Y.Inoue, H.Mimura, K.Ishino, A.Ishida, H.Fujiyasu
    • Journal Title

      Applied Surface Science 244

      Pages: 343

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications2005

    • Author(s)
      A.Ishida, K.Matsue, Y.Inoue, H.Fujiyasu, H.-J.Ko, A.Setiwan, J.-J.Kim, H.Makino, T.Yao
    • Journal Title

      Jpn. J. Appl. Phys. 44

      Pages: 5918

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Resonant-tunneling electron emitter in an AlN/GaN system2005

    • Author(s)
      A.Ishida, Y.Inoue, H.Fujiyasu
    • Journal Title

      Appl.Phys.Lett. 86

      Pages: 183102

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth of Pillarlike GaN Nanostructures2005

    • Author(s)
      S.Takeda, K.Ishino, Y.Inoue, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi, S.Sakakibara
    • Journal Title

      Jpn.J.App.Phys. 44

      Pages: 5664-5666

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Zn3N2 compensated ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy2005

    • Author(s)
      S.Sakakibara, Y.Inoue, H.Mimura, K.Ishino, A.Ishida, H.Fujiyasu
    • Journal Title

      Applied Surface Science 244

      Pages: 343-346

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications2005

    • Author(s)
      A.Ishida, K.Matsue, Y.Inoue, H.Fujiyasu, H.-J.Ko, A.Setiwan, J.-J.Kim, H.Makino, T.Yao
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 5918-5922

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication and characterization of short period AlN/GaN quantum cascade laser structures2004

    • Author(s)
      Y.Inoue, H.Nagasawa, N.Sone, K.Ishino, A.Ishida, H.Fujiyasu, J.J.Kim, H.Makino, T.Yao, S.Sakakibara, M.Kuwabara
    • Journal Title

      J. Cryst. Growth 265

      Pages: 65

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Cathodoluminescence of polycrystalline GaN grown by a hot wall epitaxy technique2004

    • Author(s)
      Y.Inoue, T.Hoshino, S.Takeda, K.Ishino, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi, S.Sakakibara
    • Journal Title

      Phys. Stat. Sol. (b) 241

      Pages: 2717

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Strong luminescence from dislocation-free GaN nanopillars2004

    • Author(s)
      Y.Inoue, T.Hoshino, S.Takeda, K.Ishino, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi, S.Sakakibara
    • Journal Title

      Appl. Phys. Lett. 85

      Pages: 2340

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Fabrication and characterization of short period AlN/GaN quantum cascade laser structures2004

    • Author(s)
      Y.Inoue, H.Nagasawa, N.Sone, K.Ishino, A.Ishida, H.Fujiyasu, J.J.Kim, H.Makino, T.Yao, S.Sakakibara, M.Kuwabara
    • Journal Title

      J.Cryst.Growth 265

      Pages: 65-70

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Cathodoluminescence of polycrystalline GaN grown by a hot wall epitaxy technique2004

    • Author(s)
      Y.Inoue, T.Hoshino, S.Takeda, K.Ishino, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi, S.Sakakibara
    • Journal Title

      Phys.Stat.Sol.(b) 241

      Pages: 2717-2721

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Strong luminescence from dislocation-free GaN nanopillars2004

    • Author(s)
      Y.Inoue, T.Hoshino, S.Takeda, K.Ishino, A.Ishida, H.Fujiyasu, H.Kominami, H.Mimura, Y.Nakanishi, S.Sakakibara
    • Journal Title

      Appl.Phys.Lett. 85

      Pages: 2340-2342

    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] 電子放出素子用の針状電子放出体の製造方法及び電子放出素子の製造方法2006

    • Inventor(s)
      榊原慎吾, 井上翼, 三村秀典, 石田明広
    • Industrial Property Rights Holder
      ヤマハ株式会社, 国立大学法人静岡大学
    • Industrial Property Number
      特願2006-77756
    • Filing Date
      2006-03-20
    • Description
      「研究成果報告書概要(和文)」より

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Published: 2007-12-13  

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