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2005 Fiscal Year Final Research Report Summary

Research on High-Efficiency Microwave Doherty Power Amplifiers

Research Project

Project/Area Number 16560304
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionUniversity of Hyogo

Principal Investigator

TAKAYAMA Yoichiro  University of Hyogo, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (90336826)

Co-Investigator(Kenkyū-buntansha) FUJITA Takayuki  University of Hyogo, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (50336830)
MAENAKA Kazusuke  University of Hyogo, Graduate School of Engineering, associate Professor, 大学院・工学研究科, 助教授 (70173721)
Project Period (FY) 2004 – 2005
KeywordsMicrowave power amplifier / Doherty amplifier / Amplifier circuit design / Si MOSFET / Intermodulation distortion
Research Abstract

A practical design method of microwave Doherty amplifiers is proposed. The Doherty amplifier consists of a carrier amplifier (typically class-B) and a peak amplifier (typically class-C), which are coupled directly at the output. A general circuit condition to add exactly output powers of m amplifiers connected directly to a common output load at a given input power level is presented. The condition is applied to design microwave Doherty amplifiers. Microwave Doherty amplifiers consisting of power Si MOSFETs are designed and fabricated at 800 MHz band, and their superior performance over a wide range of output power is confirmed by circuit simulation and experimental consideration. The Doherty power amplifiers with unequal input power-split are also investigated. The unequal power-split circuit is of Wilkinson divider type. The design method of the Doherty amplifier with unequal input powers to the carrier amplifier and the peak amplifier is presented. 800 MHz Si MOSFET Doherty power amplifiers are designed, fabricated and their performances are estimated. Unequal power input configuration realizes more flexible microwave power amplifier circuit design and better performances of power amplifiers can be expected.

  • Research Products

    (4 results)

All 2005 2004

All Journal Article (4 results)

  • [Journal Article] Design Method of Microwave Doherty Power Amplifiers and Its Application to Si Power MOSFET Amplifiers2005

    • Author(s)
      Y.Takayama, T.Harada, T.Fujita, K.Maenaka
    • Journal Title

      Electronics and Communications in Japan (Part II : Electronics) Vol.88, no.4

      Pages: 9-17

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Design Method of Microwave Doherty Power Amplifiers and Its Application to Si Power MOSFET Amplifiers2005

    • Author(s)
      Y.Takayama, T.Harada, T.Fujita, K.Maenaka
    • Journal Title

      Electronics and Communications in Japan (Part II : Electronics) vol.88

      Pages: 9-17

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] マイクロ波ドハティ増幅器の設計法及びSiMOSFET電力増幅器への応用2004

    • Author(s)
      高山洋一郎, 原田哲治, 藤田孝之, 前中一介
    • Journal Title

      電子情報通信学会論文誌C Vol.J87-C, no.10

      Pages: 745-753

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Design Method of Microwave Doherty Power Amplifiers and Its Application to Si Power MOSFET Amplifiers2004

    • Author(s)
      Y.Takayama, T.Harada, T.Fujita, K.Maenaka
    • Journal Title

      IEICE Trans.on Electronics vol.J87-C, no.10

      Pages: 745-753

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 2007-12-13  

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