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2005 Fiscal Year Final Research Report Summary

A Study on Fast Visible-Light Photodetectors Employing Indium Gallium Nitride

Research Project

Project/Area Number 16560313
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionToyota Technological Institute

Principal Investigator

OHSAWA Jun  Toyota Technological Institute, Faculty of Engineering, Associate Professor, 工学部, 助教授 (20176861)

Project Period (FY) 2004 – 2005
Keywordsphotodetector / indium gallium nitride / nitride semiconductor / visible light / high-speed operation / Schottky photodiode / MSM photodiode
Research Abstract

The objective is characterizing thin films of indium gallium nitride as a material for photodetectors through fabrication of devices with high sensitivities and high speed responses. The idea was based on the observation that conventional studies placed too much emphases on light-emitting devices of this material system.
In the device fabrication, practically acceptable characteristics have been achieved in large area detectors of a metal-semiconductor-metal structure. The characteristics include a low dark current of less than 100 pA at 10V, a high responsivity over 0.1 A/W, and pulse responses on the order of 10 ns, with detecting area up to 1 mm square. The In_xGa_<1-x>N films with x=0.12 on GaN/sapphire were characterized as a photoactive material in the wavelength range of 400-500 nm by examining the differences between front vs. back incidence configurations, especially an effect of illuminating the region just beneath the electrode metal. The observation resulted in finding an anomalous bias dependence of thin InGaN on GaN layers, which is explained by a built-in field existing in a distorted crystal of coherently grown InGaN layer. The effect was successfully applied in a two-color detector that can selectively sense optical signals of 350 nm or 400 nm by simply changing the bias voltage of the Schottky barrier diode. In addition, designing the thicknesses of layers and the operating voltage enabled us to realize a UV-blind blue light detector with similar structure. In relation to the response speed, measurements on deep energy levels were conducted finding an electron trap in the GaN crystal. This finding, however, did not reached to the practical merit of eliminating slow components in photocurrent responses.
This study is continued to characterize the material system and apply it to practical photodetectors with an emphasis on the use of built-in field in the thin InGaN layer.

  • Research Products

    (11 results)

All 2006 2005

All Journal Article (10 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky photodetectors on Sapphire2006

    • Author(s)
      Jun OHSAWA 他3名
    • Journal Title

      Jpn. J. Appl. Phys. Vol.45 No.16

      Pages: L435-L437

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Narrow-Band 400nm MSM Photodetectors Using A Thin InGaN Layer on A GaN/sapphire Structure2006

    • Author(s)
      Jun OHSAWA 他3名
    • Journal Title

      phys. stat. sol.(c) Vol.3 Issue 6

      Pages: 2278-2282

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky barrier Photodiode2006

    • Author(s)
      Jun OHSAWA 他3名
    • Journal Title

      Jpn. J. Appl. Phys. Vol.46 No.24(印刷中)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire2006

    • Author(s)
      Jun OHSAWA et al.
    • Journal Title

      Jpn.J.Appl.Phys. Vol.45 No.16

      Pages: L435-L437

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Narrow-Band 400nm MSM Photodetectors Using A Thin InGaN Layer on A GaN/sapphire Structure2006

    • Author(s)
      Jun OHSAWA et al.
    • Journal Title

      phys.stat.sol.(c) Vol.3 No.6

      Pages: 2278-2282

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky Barrier Photodiode2006

    • Author(s)
      Jun OHSAWA et al.
    • Journal Title

      Jpn.J.Appl.Phys. Vol.46 No.24 (in press)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire2005

    • Author(s)
      Jun OHSAWA 他4名
    • Journal Title

      Jpn. J. Appl. Phys. Vol.44 No.20

      Pages: L623-L625

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Comparison of Spectral Responses between Front-and Back-Incidence Configurations in a GaN MSM Photodetector on Sapphire2005

    • Author(s)
      Jun OHSAWA 他4名
    • Journal Title

      Jpn. J. Appl. Phys. Vol.44 No.12

      Pages: 8441-8444

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire2005

    • Author(s)
      Jun OHSAWA et al.
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44 No.20

      Pages: L623-L625

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Comparison of Spectral Responses between Front- and Back-Incidence Configurations in a GaN MSM Photodetector on Sapphire2005

    • Author(s)
      Jun OHSAWA et al.
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44 No.12

      Pages: 8441-8444

    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] 光電変換装置2005

    • Inventor(s)
      小澤 隆弘, 大澤 潤, 千田 昌伸
    • Industrial Property Rights Holder
      (株)豊田中央研究所 トヨタ学園 豊田合成(株)
    • Industrial Property Number
      特許権 特願2005-103127
    • Filing Date
      2005-03-31
    • Description
      「研究成果報告書概要(和文)」より

URL: 

Published: 2007-12-13  

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