AlGaN系超高効率紫外発光素子の実現に向けたキャリア再結合過程の解明と制御

Products Report

• Project/Area Number: 16H02332
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyoto University
• Principal Investigator: Funato Mitsuru 京都大学, 工学研究科, 准教授 (70240827)
• Co-Investigator(Kenkyū-buntansha): 川上 養一 京都大学, 工学研究科, 教授 (30214604)
• Project Period (FY): 2016-04-01 – 2021-03-31

Research Products

• [Journal Article] Lattice relaxation in semipolar AlxGa1-xN grown on (1-102) AlN substrates (2020)
  • Author(s): Akaike Ryota, Ichikawa Shuhei, Funato Mitsuru, Kawakami Yoichi
  • Journal Title: Applied Physics Express Volume: 13 Pages: 061008～061008
  • DOI: 10.35848/1882-0786/ab9183
  • Peer Reviewed
• [Journal Article] Deposition of carbon-containing hole injection layers on p-type Al0.8Ga0.2N grown by metalorganic vapor phase epitaxy (2020)
  • Author(s): Kishimoto Katsuhiro, Funato Mitsuru, Kawakami Yoichi
  • Journal Title: Applied Physics Letters Volume: 117 Pages: 062101～062101
  • DOI: 10.1063/5.0017703
  • Peer Reviewed
• [Journal Article] Broadband ultraviolet emission from 2D arrays of AlGaN microstructures grown on the patterned AlN templates (2020)
  • Author(s): K. Kataoka, M. Funato, and Y. Kawakami
  • Journal Title: Physica Status Solidi A Volume: 217 Pages: 1900764-1900764
  • DOI: 10.1002/pssa.201900764
  • Peer Reviewed
• [Patent(Industrial Property Rights)] 半導体素子及びp型窒化物半導体層の形成方法 (2022)
  • Inventor(s): 岸元克浩, 他4名
  • Industrial Property Rights Holder: 京大, 日亜化学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特許第7177437号