Study of atomic level magnetization of spin device electrode by atomic force / scanning tunneling microscopy

2018 Fiscal Year Final Research Report

• Project/Area Number: 16H03872
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Osaka University
• Principal Investigator: Abe Masayuki 大阪大学, 基礎工学研究科, 教授 (00362666)
• Co-Investigator(Kenkyū-buntansha): 浜屋 宏平 大阪大学, 基礎工学研究科, 教授 (90401281)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Keywords: スピンデバイス / SrTiO3 / 走査型トンネル顕微鏡 / STM / 鉄

Outline of Final Research Achievements

We have developed a combination system of high-performance ultra-high vacuum scanning probe microscopy and molecular beam epitaxy equipment for the spintronics research with atomic level. The system allows us to perform thin-film preparation and atomic resolution measurement without breaking vacuum, which is expected to control an easy magnetization axis of high-performance spintronics material with high reproducibility. Using this apparatus, the appearance of the initial growth of Fe on the SrTiO 3 (100)-(R 13 × R 13) uppermost surface was observed with high resolution using a scanning tunneling microscope. We found that the structure of the initial growth was different depending on the temperature of the substrate, and it was confirmed by scanning tunneling spectroscopy.

Free Research Field

走査型プローブ顕微鏡、スピンデバイス

Academic Significance and Societal Importance of the Research Achievements

成膜装置と計測装置の複合装置によってデバイス開発を原子レベルで行うことができることに本研究の意義がある。