2018 Fiscal Year Final Research Report
A breakthrough in ultra-high integration of ferroelectric memories
| Project/Area Number |
16H04354
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Hyogo |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
SHIMIZU masaru
NAKASHIMA seiji
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Keywords | 強誘電体 / ナノワイヤトランジスタ / ナノワイヤキャパシタ |
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| Outline of Final Research Achievements |
In various electronic devices, flash memories are widely used as a nonvolatile memory which has drawbacks of high energy consumption and low operation speed. In this study, in order to realize ultrahigh density ferroelectric nonvolatile random access memories with much lower power consumption and higher operation speed, we propose a use of nanowires including ferroelectrics as a memory element, which are as thin as one-thousandth of a hair. We have successfully fabricated ferroelectric nanowire capacitor and transistor structures and demonstrated potential for ultrahigh density ferroelectric memory applications.
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| Free Research Field |
電子材料・電子デバイス
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| Academic Significance and Societal Importance of the Research Achievements |
低消費電力かつ高速動作が可能な不揮発性メモリの一つである強誘電体メモリを大容量化するために，情報を記憶する素子の形状を非常に細い（髪の毛の1/1,000）ナノワイヤとすることを提案し，ナノワイヤ素子の作製に成功しました．本技術に基づき，素子の性能が向上し，超低消費電力かつ超高集積強誘電体メモリが実現すれば，IoTデバイスやクラウド社会を支えるデータセンター等の省電力化が実現できる可能性があります．
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