Solution-based gate dielectrics for high performance graphene transistors

2016 Fiscal Year Final Research Report

• Project/Area Number: 16H06631
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Tohoku University
• Principal Investigator: PARK GOONHO 東北大学, 電気通信研究所, 教育研究支援者 (90784116)
• Project Period (FY): 2016-08-26 – 2017-03-31
• Keywords: グラフェン / 溶液法 / 絶縁膜 / トランジスタ

Outline of Final Research Achievements

We propose a damage-free formation method for high-quality gate dielectrics on epitaxial graphene (EG), which involves solution-based Al2O3 coating combined with microwave-assisted annealing (MW-sol-Al2O3). This method substantially preserves the pristine properties of EG with minimized hole doping and strain induction. The MW-sol-Al2O3 showed a surface roughness of >0.237nm and a dielectric constant of 7.5. Its leakage current is 1000 times smaller than that of natural Al2O3 at the same electric field, was obtained. These excellent MW-sol-Al2O3 properties are ascribed to the effective elimination of hydroxyl- and carboxyl-related components from the film by microwave-assisted annealing.

Free Research Field

電子工学