2017 Fiscal Year Annual Research Report
Development of silicon heterojunction solar cells with tunneling oxide passivation layers
| Project/Area Number |
16H06796
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
中田 和吉 東京工業大学, 工学院, 助教 (70783223)
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| Project Period (FY) |
2016-08-26 – 2018-03-31
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| Keywords | 太陽電池 / 結晶シリコン太陽電池 / パッシベーション |
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| Outline of Annual Research Achievements |
Although silicon heterojunction silicon solar cells show high efficiency, their low heat resistance and optical losses at the passivation layer hinder further efficiency improvement. The aim of this work is the fabrication of a simple p-type contact structure that overcomes these issues and combines simultaneously high passivation quality and low contact resistivity. For this purpose, the stack of a very thin oxide layer and a hole selective layer was considered.
A thin SiOx layer was adopted as the passivation layer, which can be fabricated by a simple wet process at room temperature. Initially, p-μc-SiOx:H was adopted as the hole selective layer material. We found that inserting the SiOx between the silicon wafer and the p-μc-SiOx:H layer was effective in hindering interfacial recombination. However, the damage caused by the p-μc-SiOx:H deposition resulted in a passivation quality inferior than that required for a high efficiency solar cell.
Aiming in improving the passivation quality, MoOx was applied as an alternative material for the hole selective layer. MoOx can be fabricated by a low-damage process and is, therefore, suitable for solar cell application. Inserting the SiOx layer between the silicon wafer and the MoOx layer results in implied-Voc improving from 653 to 667 mV.
These results indicate that this approach is promising for the realization of a simple p-type contact that possesses both low contact resistance and high passivation quality for crystalline silicon solar cells.
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| Research Progress Status |
平成29年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
平成29年度が最終年度であるため、記入しない。
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