2018 Fiscal Year Final Research Report
Development of silicon heterojunction solar cells with tunneling oxide passivation layers
| Project/Area Number |
16H06796
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Energy engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2016-08-26 – 2018-03-31
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| Keywords | シリコン太陽電池 / キャリア選択層 / パッシベーション / ヘテロ接合 |
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| Outline of Final Research Achievements |
Alternative p-type contact structure was developed for application to silicon heterojunction solar cells.
The amorphous silicon material used in the conventional structure has a low thermal tolerance and show parasitic absorption losses that, respectively, restrict the use of low-cost fabrication processes and limit further efficiency improvement. An alternative hole selective contact structure is proposed to overcome these issues. By using an oxide passivation layer thinner than 2 nm that allows tunneling effect, and after evaluating several hole selective materials, an efficiency of 15.4% was achieved.
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| Free Research Field |
太陽電池
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| Academic Significance and Societal Importance of the Research Achievements |
本来絶縁体である酸化膜を厚さ2 nm以下にすることでキャリアの輸送が可能となり、またそれを適切な材料と組み合わせることでこれまでにないコンタクト形成に新たな可能性を示した。さらに、提案する簡易な作製方法はデバイス製造の低コスト化に貢献できる。
本研究の成果は太陽電池だけでなく多様な半導体デバイスへの応用が期待できる。
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