2017 Fiscal Year Final Research Report
Physics of topological phase transition in thin films from view of composition dependence
Project/Area Number |
16H06860
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Single-year Grants |
Research Field |
Condensed matter physics II
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Research Institution | Nagoya University |
Principal Investigator |
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Project Period (FY) |
2016-08-26 – 2018-03-31
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Keywords | トポロジカル絶縁体 / ラインノード半金属 / 量子臨界点 / 分子線エピタキシー / 不純物置換効果 / 薄膜 |
Outline of Final Research Achievements |
In CaAg(As,P), it was proposed that there is a crossover between a topological insulator and a line node semimetal phase by controlling the strength of spin orbit coupling through changing ratio of As to P. In this project, we aimed to clarify physical properties of quantum phase transition between the two topological phases. As a result, thin films of single phase CaAgAs and CaAgP were firstly synthesized by molecular beam epitaxy method. CaAgAs thin films showed the weak antilocalization behavior in magnetoresistance. Although the synthesis of CaAg(As,P) mixed system is left as a future task, we successfully doped magnetic impurities in CaAgAs and obtained a result indicating a breaking of time reversal symmetry.
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Free Research Field |
物性物理
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