Device modeling of SiC bipolar junction transistors and fabrication of high-frequency power converters

2017 Fiscal Year Final Research Report

• Project/Area Number: 16H06890
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Kyoto University
• Principal Investigator: Okuda Takafumi 京都大学, 工学研究科, 助教 (00783036)
• Project Period (FY): 2016-08-26 – 2018-03-31
• Keywords: 炭化珪素 / バイポーラトランジスタ / 電力変換回路 / ベース駆動回路 / 高周波動作 / デバイスモデリング / スイッチング特性

Outline of Final Research Achievements

In this study, high-frequency power converters are investigated with silicon carbide (SiC) bipolar junction transistors (BJTs). In order to design high-frequency power converters, numerical simulation is constructed by developing device models of semiconductor devices and analyzing parasitic components of circuits. Then, a high-speed gate driving circuit is designed using the constructed numerical simulation. Since BJT is a current-controlled device, a speed-up capacitor with a base resistance is required for high-frequency switching. Finally, a 100-W DC-DC boost converter is fabricated using a SiC BJT. It is found that the power conversion efficiency is 94% at a switching frequency of 1 MHz.

Free Research Field

電子デバイス