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2018 Fiscal Year Final Research Report

Fabrication of thin films of amorphous carbon nitride and the elucidation of mechanism of film deposition

Research Project

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Project/Area Number 16K04958
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionNagaoka University of Technology

Principal Investigator

Ito Haruhiko  長岡技術科学大学, 工学研究科, 准教授 (70201928)

Research Collaborator Saitoh Hidetoshi  
Ogaki Takeshi  
Tsudome Hiroki  
Kumakura Motoki  
Mogi Nobuyoshi  
Hiramatsu Kennya  
Iizawa Yoshiki  
Sekizaki Chitose  
Karoh Yoshinori  
Project Period (FY) 2016-04-01 – 2019-03-31
Keywordsアモルファス窒化炭素 / プラズマCVD / XPS分析 / 結合状態解析
Outline of Final Research Achievements

Amorphous carbon nitride (a-CNx) films have been expected as the potential candidate of the ultrahard caoting material. Since the length of the C-N single bond (0.147 nm) is shorter than that of the sp3 C-C bond (0.154 nm), it is expected that the higher density than that of the diamond-like carbon (DLC) can be obtained. The purpose of the synthesis will be that the [N]/([N]+[C]) ratio of films makes as close as possible to the theoretical value, 0.57. In this study, high [N]/([N]+[C]) ratios of 0.32-0.49 have been obtained using the microwave or radio-frequency plasma CVD apparatus where trace amounts (7mTorr) of CH3CN,C6H6, or n-C6H14 were admixed into the N2 gas of 0.3 Torr. The chemical bonding states of films were analyzed by using the XPS with narrow scan.

Free Research Field

プラズマ化学、分子分光学、物理化学

Academic Significance and Societal Importance of the Research Achievements

本研究成果の学術的・社会的意義は以下のとおりである。これまでN2と有機化合物(主にCH4)の混合気体に対する放電プラズマCVDでは、膜の[N]/([N]+[C])比は0.1程度いかに抑えられていた。本研究成果の核心はその比を0.5近くにまで引き上げたことで、有機化合物蒸気の分圧をN2の分圧に比べて極端に低く抑えるという反応設計が機能していることを示している。これらの高窒素含有膜の結合状態をXPSで解析された例はこれまで報告されておらず、今後実用化に向けた取り組みにおいて基礎データを提供する意義がある。本研究成果をまとめた論文に対し、「窒化炭素膜の実用化への扉を開いた」とのコメントがあった。

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Published: 2020-03-30  

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