2018 Fiscal Year Final Research Report
Development of an intense terahertz pulse source using high-quality InAs thin films
| Project/Area Number |
16K06326
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
小山 政俊 大阪工業大学, 工学部, 講師 (30758636)
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Keywords | テラヘルツパルス光源 / インジウムヒ素 / ヘテロ構造 |
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| Outline of Final Research Achievements |
Terahertz time-domain spectroscopy (THz-TDS) has useful applications particularly in the field of medical diagnosis and non-destructive inspections. However, the pulse light source used for the THz-TDS is a photo-conductive switch which requires precise alignment. We developed a cost-effective and easy-to-use pulse light source using InAs thin films. We previously found that the use of a semiconductor thin film reduces the cost and improve the emission efficiency. In this project, we studied the use of a heterostructure for further improving the emission efficiency and found that the InAs/GaSb/InAs structure does improve the efficiency by 40%.
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| Free Research Field |
化合物半導体デバイス
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| Academic Significance and Societal Importance of the Research Achievements |
テラヘルツパルス電磁波を利用したテラヘルツ時間領域分光法と呼ばれる測定技術は，ガン診断などの医療応用や美術品の非破壊測定などへの応用が期待されています．そのための光源として一般に利用される光伝導アンテナという素子に比べ，安価で取り扱いが容易なテラヘルツパルス光源を開発すると，システムが安価になり，この技術をより広い範囲に応用する可能性が拓けます．
この研究では，光源に半導体薄膜を利用することで従来より放射強度の高い素子が得られることが示され，さらに複数の半導体を組み合わせることで，その強度が増大できることを示しました．
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