2017 Fiscal Year Final Research Report
Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap
| Project/Area Number |
16K13673
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Saga University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
IMURA Masataka 物質材料研究機構, 主任研究員 (80465971)
TAKAHASHI Kazutoshi 佐賀大学, シンクロトロン光応用研究センター, 准教授 (30332183)
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| Research Collaborator |
KATO Yuji 佐賀大学, 理工学部
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | 酸化ガリウム / 混晶 / 超格子 |
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| Outline of Final Research Achievements |
(1) Growth of γ-(Al,Ga)2O3 single crystalline alloy films with entire alloy compositions were using MgAl2O4 substrates. The band gap of the alloy can be tuned in a wide range between 5.0 and 7.0 eV. (2)α-, and γ-Ga2O3/Al2O3 superlattices were fabricated on sapphire and MgAl2O4 substrates, respectively. Both superlattices revealed to have coherent interfaces, which is desirable for heterojunciton device applications. These results will encourage the studies on meta-stable phase (Al,Ga)2O3-based electronics.
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| Free Research Field |
結晶工学
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