Room temperature bonding of diamond to Si for power device application and clarification of bonding mechanism

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K13676
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Osaka City University
• Principal Investigator: Shigekawa Naoteru 大阪市立大学, 大学院工学研究科, 教授 (60583698)
• Co-Investigator(Kenkyū-buntansha): 嘉数 誠 佐賀大学, 工学(系)研究科(研究院), 教授 (50393731)
• Research Collaborator: LIANG Jianbo
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 単結晶ダイヤモンド / 直接接合 / シリコン / 界面 / アモルファス層

Outline of Final Research Achievements

We demonstrated that the diamond/Si interfaces fabricated by direct bonding show thermal tolerance against 1000 deg. Celcius. The obtained results are the first step for clarifying mechanisms for fabricating solid/solid interfaces at intermediate layer between diamond and Si. The results also imply that diamond layer can be epitaxially grown and device can be fabricated on diamond bonded on Si substrate. We also succeeded in direct bonding of polycrystalline diamond and Al, which means that junctions made of semiconductor/diamond/metal can be made.

Free Research Field

半導体直接接合

Academic Significance and Societal Importance of the Research Achievements

1000℃という接合界面の極めて高い耐熱性は、シリコン基板上に接合されたダイヤモンド結晶上のダイヤモンド結晶成長、更にはダイヤモンド素子を作製可能であること、ダイヤモンドを熱拡散層とする「半導体素子／ダイヤモンド／金属ヒートシンク」というパワーエレクトロニクスモジュール実現の可能性を示しており、ダイヤモンドの応用開拓の観点から極めて高い価値を有する。