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2018 Fiscal Year Final Research Report

Development of highly sensitve UV sensing device with wide band gap semiconductor

Research Project

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Project/Area Number 16K13792
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Particle/Nuclear/Cosmic ray/Astro physics
Research InstitutionIwate University

Principal Investigator

Narita Shinya  岩手大学, 理工学部, 教授 (80322965)

Research Collaborator YAMAGUCHI Eiichi  
Project Period (FY) 2016-04-01 – 2019-03-31
Keywordsフォトダイオード / 紫外光センサ / 化合物半導体 / アバランシェダイオード
Outline of Final Research Achievements

We developed a highly sensitive UV sensing device with a wide-bandgap semiconductor. We fabricated photodiodes with various types of compound semiconductor, and measured the electrical properties and the spectral responsivity in UV region. Then, we optimized the condition of the substrate, the device design, and the fabrication process. As the result, we successfully developed an avalanche photodiode with SiC which indicated high sensitivity to the UV light. The device is expected to be applied to the sensor used in high energy physics, astronomy, and environmental measurements.

Free Research Field

素粒子物理学実験

Academic Significance and Societal Importance of the Research Achievements

素粒子物理学分野では、紫外光検出技術をベースとしたエネルギースペクトロメータやトラッキングデバイスが使用されているが、本研究で開発された高感度紫外光受光素子をそれら測定器に応用できれば、飛躍的な性能向上が期待され、目的とする物理事象観測の高精度化が実現できる。一方で、高感度紫外光素子の実用化が進めば、天文学分野での高感度天体計測機器、医療分野での高精度イメージングセンサ、環境科学分野での紫外線に対する新しい評価システムなど、様々な分野での革新的な波及効果が想定される。

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Published: 2020-03-30  

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