Anisotropic plasma CVD using pressure-controlled micro plasmas

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K13922
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Plasma science
• Research Institution: Kyushu University
• Principal Investigator: Shiratani Masaharu 九州大学, システム情報科学研究院, 教授 (90206293)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 異方性製膜 / プラズマCVD / 製膜形状制御 / マイクロプラズマ / カーボン保護膜

Outline of Final Research Achievements

We have developed high-pressure anisotropic plasma CVD method using H-assisted plasma CVD reactor. We have employed H2+Ar diluted toluene as ingredient gas. The total gas pressure was kept at 5 Torr which is much higher than the conventional pressure condition. Using the high pressure capacitively coupled plasmas, we realized to deposit hydrogenated amorphous carbon films with high film density of 1.8 g/cc at high deposition rate of 81 nm/min. In addition, we also achieved anisotropic deposition at high deposition rate of 3 times faster than the conventional deposition rate. These results shows above mentioned plasma extend the process parameter windows in plasma CVD processes.

Free Research Field

プラズマ理工学