Preparation of composite comprising single crystals from eutectic melt for SiC epitaxial substrates

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K14089
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Inorganic industrial materials
• Research Institution: Tohoku University
• Principal Investigator: Katsui Hirokazu 東北大学, 金属材料研究所, 特任准教授 (70610202)
• Research Collaborator: GOTO Takashi 東北大学, 金属材料研究所, 教授 (60125549)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 共晶 / 炭化ケイ素 / ホウ化物 / 高温 / 溶融凝固 / 一方向凝固

Outline of Final Research Achievements

This study aimed to explore substrates, having high-temperature stability and electrical conductivity, for SiC epitaxial growth by developing melt solidification of eutectics comprising SiC and transition metal diborides. We melted and solidified composites of SiC-CrB2 and SiC-VB2 by an arc-melting method and investigated effects of nominal compositions on the resultant microstructure and crystal orientation relationships in the eutectic composites. In SiC-CrB2, the eutectic composition was 22.5 mol% of SiC, in which the minute eutectic structure consisting of fine SiC grains several hundreds of nanometers dispersed in CrB2 matrix formed. The SiC-VB2 eutectic composite at the eutectic composition of 45 mol% SiC exhibited single-crystalline-like unidirectionally solidified microstructure with the crystal orientation relationship of SiC(111)//VB2(1-210) and SiC[0-11]//VB2[0001].

Free Research Field

複合材料