Creation of semiconductor surfaces by catalytic tools loaded with atomically controlled graphene

2018 Fiscal Year Final Research Report

• Project/Area Number: 16K14133
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: Arima Kenta 大阪大学, 工学研究科, 准教授 (10324807)
• Research Collaborator: NAKADE Kazuki ; LI Shaoxian
• Project Period (FY): 2016-04-01 – 2019-03-31
• Keywords: 界面化学 / 触媒反応 / グラフェン / 半導体プロセス / エッチング

Outline of Final Research Achievements

By using commercial graphene oxide as a starting material, we prepared several kinds of reduced-graphene-oxide (rGO) sheets by chemical reduction using either hydrazine or hydrothermal treatments. And their degrees of reduction as well as both doping sites and concentrations of nitrogen atoms in the rGO sheets were investigated. Experimental results indicate that different rGO sheets have different catalytic performances to etch a semiconductor surface in a solution. Then we patterned a film of graphene catalysts on a semiconductor surface, and tried to etch the patterned region selectively. The obtained results contribute to establish chemical etching of semiconductor surfaces assisted by rGO sheets.

Free Research Field

半導体表面科学

Academic Significance and Societal Importance of the Research Achievements

シリコンを基板とした電子デバイスの性能向上が限界に達しつつある今日、従来とは異なる材料を導入する試みが世界レベルで進んでいる。デバイスの作製には、ウェットエッチングが不可欠である。近年、貴金属と接触した半導体表面が、溶液中で選択的に溶解することを利用した金属アシストエッチングが盛んに研究されている。代表者は、貴金属を用いない、グラフェンアシストエッチングの開発に取り組み、基礎特性を明らかにした。