2017 Fiscal Year Final Research Report
Luminescence dynamics of BN exhibiting large excitonic effects in the deep ultraviolet wavelength region
| Project/Area Number |
16K14222
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
小島 一信 東北大学, 多元物質科学研究所, 准教授 (30534250)
原 和彦 静岡大学, 電子工学研究所, 教授 (80202266)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Keywords | 半導体物性 / 励起子 / 光電子銃 / 窒化ボロン |
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| Outline of Final Research Achievements |
To cope with the water shortage problem and to downsize a variety of photo-excitation sources, there has been a strong demand to realize low-cost solid-state deep-ultraviolet (DUV) light emitters. Since hexagonal boron nitride (h-BN) exhibits DUV lights at approximately 215-240 nm and is predicted to show strong excitonic effects in its optical spectra, h-BN is one of the promising semiconductors of DUV and UV light emitters. In this research project, radiative and nonradiative recombination dynamics of excitons of h-BN microcrystals (MCs) and epilayers in the DUV wavelength region were investigated by using our unique spatio-time-resolved cathodoluminescence (STRCL) equipment. The h-BN samples exhibited distinct DUV luminescence peaks although the spectral features indicated an indirect bandgap nature of h-BN. The result indicates a strong interaction between the indirect excitons and phonons due to the excitonic effect.
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| Free Research Field |
工学
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