Spin-functional materials and devices using narrow-gap ferromagnetic semiconductors

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K14224
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: Tanaka Masaaki 東京大学, 大学院工学系研究科(工学部), 教授 (30192636)
• Research Collaborator: Le Duc Anh 東京大学, 大学院工学系研究科, 助教 ; Nguyen Thanh Tu ホーチミン師範大学, 講師 ; Pham Nam Hai 東京工業大学, 工学院, 准教授
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: スピン / 強磁性半導体 / 狭ギャップ / (In,Fe)As / (Ga,Fe)Sb / (In,Fe)Sb / キュリー温度 / スピントロニクス

Outline of Final Research Achievements

We have successfully grown a new class of narrow-gap III-V based ferromagnetic semiconductors with zinc-blende crystal structures and their heterostructures. We have revealed their properties and functionalities, which can be applied to spintronics devices. Ferromagnetic semiconductors (FMS) are alloy semiconductors doped with magnetic atoms and have both the properties of semiconductors and ferromagnets, thus expected to be functional materials for next-generation electronics. We have created p-type (Ga,Fe)Sb and n-type (In,Fe)Sb whose Curie temperatures are higher than room temperature, and their quantum heterostructures. These new materials and heterostructures are shown to have unique and useful properties, which can be applied to future spintronics devices.

Free Research Field

スピントロニクス、電子材料物性、デバイス工学