Development for High-Performance Tunnel Transistors with Direct-Transition-Type GeSn

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K14234
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: SADOH Taizoh 九州大学, システム情報科学研究院, 准教授 (20274491)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: トランジスタ / 結晶成長

Outline of Final Research Achievements

Improvement of operation speed and functionality of large-scale integrated circuits has been achieved by scaling of silicon transistors. However, leakage current of transistors under off-state is increased by scaling, which makes difficult to further improve the performance of the large-scale integrated circuits. To suppress the leakage current of transistors under off-state, a novel device structure, which turn on/off the drain current by the quantum mechanics tunneling effect, should be developed. In the present study, techniques for growth of direct-transition-type GeSn crystals on insulator and doping have been developed to realize the tunnel transistors.

Free Research Field

工学